Browsing by Author "Asubay, Sezai"
Now showing items 1-5 of 5
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The characteristic diode parameters in Ti/p-InP contacts prepared by DC sputtering and evaporation processes over a wide measurement temperature
Ejderha, Kadir; Asubay, Sezai; Yıldırım, Nezir; Güllü, Ömer; Türüt, Abdülmecit; Abay, Bahattin (World Scientific, 2017-06)The titanium/p-indium phosphide (Ti/p-InP) Schottky diodes (SDs) have been prepared by thermal evaporation and DC magnetron sputtering deposition. Then, their current-voltage (I-V) characteristics have been measured in the ... -
Determination of the laterally homogeneous barrier height of thermally annealed and unannealed Au/p-InP/Zn-Au Schottky barrier diodes
Güllü, Ömer; Turut, Abdulmecit; Asubay, Sezai (Elsevier, 2008-03-25)We have identically prepared Au/p-InP Schottky barrier diodes (SBDs). The diodes were annealed up to 400 °C thermally. The barrier height (BH) for the as-deposited Au/p-InP/Zn-Au SBDs from the current–voltage characteristics ... -
Electrical characterization of the Al/new fuchsin/n-Si organic-modified device
Güllü, Ömer; Asubay, Sezai; Turut, Abdulmecit; Aydoğan, Şakir (Elsevier, 2010-03)The current–voltage (I–V) and the capacitance–voltage (C–V) characteristics of the Al/new fuchsin (NF)/n-Si device have been investigated at room temperature. The I–V characteristic of the device shows a good rectification. ... -
Electrical properties of safranine T p Si organic inorganic semiconductor devices
Güllü, Ömer; Asubay, Sezai; Biber, Mehmet; Kılıçoğlu, Tahsin; Turut, Abdulmecit (Cambridge University, 2010-04-25)We investigated the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of identically prepared safranine T/p-Si organic/inorganic Schottky devices (total 26 diodes) formed by evaporation of organic compound ...
