Browsing by Author "Güllü, Ömer"
Now showing items 1-20 of 57
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Al/Nigrosin/p-Si yapıların fabrikasyonu ve temel diyot parametrelerinin hesaplanması
Güllü, Ömer (Dicle Üniversitesi, 2018-09-25)Bu çalışmada π bağları açısından zengin organik molekülün (Nigrosin (NIG)) optik özellikleri UV-Vis yöntemiyle belirlendi. Cam altlık üzerinde damlatma yöntemi ile büyütülen NIG ince tabakasının direkt yasak enerji ... -
Analysis of electrical and photoelectrical properties of ZnO/p-InP heterojunction
Ocak, Yusuf Selim; Kulakçı, Mustafa; Turan, Raşit; Kılıçoğlu, Tahsin; Güllü, Ömer (Elsevier, 2011-06)A ZnO/p-InP heterojunction has been fabricated by dc sputtering of ZnO on p-InP. It has been observed that the device has a good rectification. The electrical properties of the device such as ideality factor, barrier height, ... -
Analysis of interface states of Al/DNA/p-Si MIS photovoltaic structures with DNA biomolecules using the conductance technique
Güllü, Ömer (Taylor & Francis, 2017-03-29)In this study, we report on the calculation of interface charge distribution of metal–interlayer–semiconductor (MIS) photovoltaic diodes containing DNA biomolecules and Si semiconductor based on the conductance technique. ... -
The analysis of lateral distribution of barrier height in identically prepared Co/n-Si Schottky diodes
Güllü, Ömer; Karataş, Şükrü; Güler, Gülşen; Bakkaloğlu, Ömer Faruk (Elsevier, 2009-11-03)We have studied the experimental linear relationship between ideality factors and barrier heights (BHs) for Co/n-Si metal–semiconductor (MS) structures with a doping density of about 1015 cm−3. The barrier heights for the ... -
Analysis of the series resistance and interface state densities in metal semiconductor structures
Güllü, Ömer; Karataş, Şükrü; Güler, Gülşen; Bakkaloğlu, Ömer Faruk (Journal of Physics: Conference Series, 2009-03)The electrical properties of Co/n-Si metal-semiconductor (MS) Schottky structure investigated at room temperature using current-voltage (I-V) characteristics. The characteristic parameters of the structure such as barrier ... -
Barrier enhancement of Al/n-InP Schottky diodes by graphene oxide thin layer
Güllü, Ömer; Çankaya, Murat; Rajagopal Reddy, Varra (Scientific Publishers, 2019)In the present work, the surface morphology, structural and optical features of graphene oxide (GO) films are investigated. The Al/GO/n-InP MIS diode is formed by depositing GO layer on n-InP wafer for the barrier ... -
Barrier modification by methyl violet organic dye molecules of Ag p InP structures
Güllü, Ömer (European Journal of Interdisciplinary Studies, 2016-05)This work includes fabrication and electrical characterization of Metal/Interlayer/Semiconductor (MIS) structures with methyl violet organic film on p-InP wafer. Metal(Ag)/ Interlayer (methyl violet =MV)/Semiconductor(p-InP) MIS ... -
Batman'da 1 MW'lık fotovoltaik enerji sisteminin tasarlanması
Pakma, Nilay (Batman Üniversitesi, 2016)Bu çalışmada Batman ilinde 1 MWp'lik fotovoltaik elektrik enerjisi santrali için ölçülmüş yıllık güneş ışınımı verileri ve paket yazılım yardımıyla ön tasarımı gerçekleştirilerek sistemden elde edilecek performans değerlerinin ... -
The characteristic diode parameters in Ti/p-InP contacts prepared by DC sputtering and evaporation processes over a wide measurement temperature
Ejderha, Kadir; Asubay, Sezai; Yıldırım, Nezir; Güllü, Ömer; Türüt, Abdülmecit; Abay, Bahattin (World Scientific, 2017-06)The titanium/p-indium phosphide (Ti/p-InP) Schottky diodes (SDs) have been prepared by thermal evaporation and DC magnetron sputtering deposition. Then, their current-voltage (I-V) characteristics have been measured in the ... -
Characterization of an Au/n-Si photovoltaic structure with an organic thin film
Özaydın, Cihat; Akkılıç, Kemal; İlhan, Salih; Rüzgar, Şerif; Güllü, Ömer; Temel, Hamdi (Elsevier, 2013-08)We demonstrate that a copper(II) organic complex can control the electrical characteristics of conventional Au/n-Si metal-semiconductor (MS) contacts. We investigated the electronic and photovoltaic properties of a Cu(II) ... -
Current density-voltage analyses and interface characterization in Ag/DNA/p-InP structures
Güllü, Ömer; Pakma, Osman; Türüt, Abdülmecit (American Institute of Physics, 2012-02-15)The current density-voltage (J-V) characteristics of Ag/DNA/p-InP metal-insulator-semiconductor (MIS) structures have been investigated in room temperature. We have observed that the Ag/DNA/p-InP structure shows an excellent ... -
The Current voltage and Capacitance voltage frequency characteristics of the Al methyl violet n Si diode
Güllü, Ömer; Arsel, İsmail (Türk Fizik Derneği, 2016-09) -
Design of PV energy system in Batman Turkey
Pakma, Nilay; Pakma, Osman; Güllü, Ömer (AIP Conf.Proc., 2017) -
Determination of the laterally homogeneous barrier height of thermally annealed and unannealed Au/p-InP/Zn-Au Schottky barrier diodes
Güllü, Ömer; Turut, Abdulmecit; Asubay, Sezai (Elsevier, 2008-03-25)We have identically prepared Au/p-InP Schottky barrier diodes (SBDs). The diodes were annealed up to 400 °C thermally. The barrier height (BH) for the as-deposited Au/p-InP/Zn-Au SBDs from the current–voltage characteristics ... -
The effects of high-energy electron irradiation on the electrical characteristics of a lead/rhodamine-101/p-Si diode
Güllü, Ömer; Pakma, Osman (Çukurova Üniversitesi, 2017)High-energy radiation penetrates the metal-semiconductor (MS) interface and causes damage deep below the interface. Low-energy radiation causes severe lattice damage in the form of vacancies, interstitials and defect ... -
Electrical analysis of organic dye based MIS Schottky contacts
Güllü, Ömer; Turut, Abdulmecit (Microelectronic Engineering, 2010-05-25)In this work, we prepared metal/interlayer/semiconductor (MIS) diodes by coating of an organic film onp-Si substrate. Metal(Al)/interlayer(Orange G@OG)/semiconductor(p-Si) MIS structure had a good recti-fying behavior. By ...
