Browsing by Author "Türüt, Abdülmecit"
Now showing items 1-7 of 7
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The characteristic diode parameters in Ti/p-InP contacts prepared by DC sputtering and evaporation processes over a wide measurement temperature
Ejderha, Kadir; Asubay, Sezai; Yıldırım, Nezir; Güllü, Ömer; Türüt, Abdülmecit; Abay, Bahattin (World Scientific, 2017-06)The titanium/p-indium phosphide (Ti/p-InP) Schottky diodes (SDs) have been prepared by thermal evaporation and DC magnetron sputtering deposition. Then, their current-voltage (I-V) characteristics have been measured in the ... -
Current density-voltage analyses and interface characterization in Ag/DNA/p-InP structures
Güllü, Ömer; Pakma, Osman; Türüt, Abdülmecit (American Institute of Physics, 2012-02-15)The current density-voltage (J-V) characteristics of Ag/DNA/p-InP metal-insulator-semiconductor (MIS) structures have been investigated in room temperature. We have observed that the Ag/DNA/p-InP structure shows an excellent ... -
Electronic parameters of high barrier Au/Rhodamine-101/n-Inp Schottky diode with organic interlayer
Güllü, Ömer; Aydoğan, Şakir; Türüt, Abdülmecit (Elsevier, 2012-01)In this work, we present that Rhodamine-101 (Rh-101) organic molecules can control the electrical characteristics of conventional Au/n-InP metal-semiconductor contacts. An Au/n-InP Schottky junction with Rh-101 interlayer ... -
Electronic parameters of MIS Schottky diodes with DNA biopolymer interlayer
Güllü, Ömer; Türüt, Abdülmecit (Walter de Gruyter, 2015-09-01)In this work, we prepared an ideal Cu/DNA/n-InP biopolymer-inorganic Schottky sandwich device formed by coating a n-InP semiconductor wafer with a biopolymer DNA. The Cu/DNA/n-InP contact showed a good rectifying behavior. ... -
Electronic properties of Al/DNA/p-Si MIS diode: Application as temperature sensor
Güllü, Ömer; Türüt, Abdülmecit (Elsevier, 2011-01)The current-voltage (I-V) measurements were performed in the temperature range (200-300 K) on Al/DNA/p-Si Schottky barrier type diodes. The Schottky diode shows non-ideal I-V behaviour with ideality factors n equal to 1.34 ... -
Electronic properties of Cu/n-InP metal-semiconductor structures with cytosine biopolymer
Güllü, Ömer; Türüt, Abdülmecit (Polska Akademia Nauk, 2015-09)This work shows that cytosine biomolecules can control the electrical characteristics of conventional Cu/n-InP metal-semiconductor contacts. A new Cu/n-InP Schottky junction with cytosine interlayer has been formed by using ... -
High barrier Schottky diode with organic interlayer
Güllü, Ömer; Aydoğan, Şakir; Türüt, Abdülmecit (Elsevier, 2012-03)A new Cu/n-InP Schottky junction with organic dye (PSP) interlayer has been formed by using a solution cast process. An effective barrier height as high as 0.82 eV has been achieved for Cu/PSP/n-InP Schottky diodes, which ...
