Electronic parameters of MIS Schottky diodes with DNA biopolymer interlayer
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CitationGüllü, Ö, Türüt, A. (2015). Electronic parameters of MIS Schottky diodes with DNA biopolymer interlayer. Materials Science-Poland, 33(3), pp. 593-600. https://doi.org/10.1515/msp-2015-0089
In this work, we prepared an ideal Cu/DNA/n-InP biopolymer-inorganic Schottky sandwich device formed by coating a n-InP semiconductor wafer with a biopolymer DNA. The Cu/DNA/n-InP contact showed a good rectifying behavior. The ideality factor value of 1.08 and the barrier height (Φb) value of 0.70 eV for the Cu/DNA/n-InP device were determined from the forward ias I-V characteristics. It was seen that the Φb value of 0.70 eV obtained for the Cu/DNA/n-InP contact was significantly larger tan the value of 0.48 eV of conventional Cu/n-InP Schottky diodes. Modification of the interfacial potential barrier of Cu/n-InP iode was achieved using a thin interlayer of DNA biopolymer. This was attributed to the fact that DNA biopolymer interlayer increased the effective barrier height by influencing the space charge region of InP.
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