Electronic properties of Cu/n-InP metal-semiconductor structures with cytosine biopolymer
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CitationGüllü, Ö, Türüt, A. (2015). Electronic Properties of Cu/n-InP Metal-Semiconductor Structures with Cytosine Biopolymer. Acta Physica Polonica A, 128(2), pp. 383-389. https://doi.org/10.12693/aphyspola.128.383
This work shows that cytosine biomolecules can control the electrical characteristics of conventional Cu/n-InP metal-semiconductor contacts. A new Cu/n-InP Schottky junction with cytosine interlayer has been formed by using a drop cast process. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of Cu/cytosine/n-InP structure were investigated at room temperature. A potential barrier height as high as 0.68 eV has been achieved for Cu/cytosine/n-InP Schottky diodes, which have good I-V characteristics. This good performance is attributed to the effect of interfacial biofilm between Cu and n-InP. By using C-V measurement of the Cu/cytosine/n-InP Schottky diode the diffusion potential and the barrier height have been calculated as a function of frequency. Also, the interface-state density of the Cu/cytosine/n-InP diode was found to vary from 2:24 × 1013 eV-1cm-2 to 5.56× 1012 eV-1 cm-2.
SourceActa Physica Polonica A
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