High barrier Schottky diode with organic interlayer
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CitationGüllü, Ö, Aydoğan, Ş, Türüt, A. (2012). High barrier Schottky diode with organic interlayer. Solid State Communications, 152(5), pp. 381-385. https://doi.org/10.1016/j.ssc.2011.12.007
A new Cu/n-InP Schottky junction with organic dye (PSP) interlayer has been formed by using a solution cast process. An effective barrier height as high as 0.82 eV has been achieved for Cu/PSP/n-InP Schottky diodes, which have good currentvoltage (IV) characteristics. This good performance is attributed to the effect of formation of interfacial organic thin layer between Cu and n-InP. By using capacitancevoltage measurement of the Cu/PSP/n-InP Schottky diode the diffusion potential and the barrier height have been calculated as 0.73 V and 0.86 eV, respectively. From the IV measurement of the diode under illumination, short circuit current (I sc) and open circuit voltage (V oc) have been extracted as 0.33 μA and 150 mV, respectively.
SourceSolid State Communications
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