Electronic parameters of high barrier Au/Rhodamine-101/n-Inp Schottky diode with organic interlayer
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CitationGüllü, Ö, Aydoğan, Ş, Türüt, A. (2012). Electronic parameters of high barrier Au/Rhodamine-101/n-Inp Schottky diode with organic ınterlayer. Thin Solid Films, 520(6), 1944-1948. https://doi.org/10.1016/j.tsf.2011.09.043
In this work, we present that Rhodamine-101 (Rh-101) organic molecules can control the electrical characteristics of conventional Au/n-InP metal-semiconductor contacts. An Au/n-InP Schottky junction with Rh-101 interlayer has been formed by using a simple cast process. A potential barrier height as high as 0.88 eV has been achieved for Au/Rh-101/n-InP Schottky diodes, which have good current-voltage (I-V) characteristics. This good performance is attributed to the effect of formation of interfacial organic thin layer between Au and n-InP. By using capacitance-voltage measurement of the Au/Rh-101/n-InP Schottky diode the diffusion potential and the barrier height have been calculated as 0.78 V and 0.88 eV, respectively. From the I-V measurement of the diode under illumination, short circuit current and open circuit voltage have been extracted as 1.70 μA and 240 mV, respectively.
SourceThin Solid Films
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