Analysis of electrical and photoelectrical properties of ZnO/p-InP heterojunction
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CitationOcak, Y. S., Kulakçı, M., Turan, R., Kılıçoğlu, T., Güllü, Ö. (2011). Analysis of electrical and photoelectrical properties of ZnO/p-InP heterojunction. Journal of Alloys and Compounds, 509(23), pp. 6631-6634. https://doi.org/10.1016/j.jallcom.2011.03.114
A ZnO/p-InP heterojunction has been fabricated by dc sputtering of ZnO on p-InP. It has been observed that the device has a good rectification. The electrical properties of the device such as ideality factor, barrier height, series resistance have been calculated using its current-voltage (I-V) measurements between 300 and 380 K with 20 K intervals. The short current density (Jsc) and open circuit voltage (Voc) parameters have been determined between 40 and 100 mW/cm2. The photovoltaic parameters of the device have been also determined under 100 mW/cm2 and AM1.5 illumination condition.
SourceJournal of Alloys and Compounds
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