On the energy distribution profile of interface states obtained by taking into account of series resistance in Al/TiO2/p–Si (MIS) structures
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CitationPakma, O., Serin, N., Serin, S. T., Altındal, Ş. (2011). On the energy distribution profile of interface states obtained by taking into account of series resistance in Al/TiO2/p–Si (MIS) structures. Physica B: Condensed Matter, 406 (4), pp. 771-776. https://doi.org/10.1016/j.physb.2010.11.078
The energy distribution profile of the interface states (Nss) of Al/TiO2/pSi (MIS) structures prepared using the solgel method was obtained from the forward bias currentvoltage (IV) characteristics by taking into account both the bias dependence of the effective barrier height (φe) and series resistance (Rs) at room temperature. The main electrical parameters of the MIS structure such as ideality factor (n), zero-bias barrier height (φb0) and average series resistance values were found to be 1.69, 0.519 eV and 659 Ω, respectively. This high value of n was attributed to the presence of an interfacial insulator layer at the Al/pSi interface and the density of interface states (Nss) localized at the Si/TiO2 interface. The values of Nss localized at the Si/TiO2 interface were found with and without the Rs at 0.25-Ev in the range between 8.4×10 13 and 4.9×1013 eV-1 cm-2. In addition, the frequency dependence of capacitancevoltage (CV) and conductancevoltage (G/ω-V) characteristics of the structures have been investigated by taking into account the effect of Nss and R s at room temperature. It can be found out that the measured C and G/ω are strongly dependent on bias voltage and frequency.
SourcePhysica B: Condensed Matter
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