The analysis of lateral distribution of barrier height in identically prepared Co/n-Si Schottky diodes
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CitationGüllü, Ö., Karataş, Ş., Güler, G., Bakkaloğlu, Ö.F. (2009). The analysis of lateral distribution of barrier height in identically prepared Co/n-Si Schottky diodes. Journal of Alloys and Compounds. 486(1-2), pp.343-347. https://dx.doi.org/10.1016/j.jallcom.2009.06.163
We have studied the experimental linear relationship between ideality factors and barrier heights (BHs) for Co/n-Si metal–semiconductor (MS) structures with a doping density of about 1015 cm−3. The barrier heights for the Co/n-type Si metal–semiconductor structures from the current–voltage (I–V) characteristics varied from 0.64 to 0.70 eV, the ideality factor n varied from 1.18 to 1.26, and from reverse bias capacitance–voltage (C−2–V) characteristics the barrier height varied from 0.68 to 0.81 eV. The experimental barrier height distributions obtained from the I–V and C−2–V characteristics were fitted by a Gaussian distribution function, and their mean values were found to be 0.67 and 0.75 eV, respectively. Furthermore, the lateral homogeneous BH value of approximately 0.81 eV for Co/n-Si metal–semiconductor structures was obtained from the linear relationship between experimental effective BHs and ideality factors.