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dc.contributor.authorGüllü, Ömer
dc.identifier.citationGüllü, Ö. (2016). Barrier modification by methyl violet organic dye molecules of Ag p InP structures. European Journal of Interdisciplinary Studies, 2(3).en_US
dc.description.abstractThis work includes fabrication and electrical characterization of Metal/Interlayer/Semiconductor (MIS) structures with methyl violet organic film on p-InP wafer. Metal(Ag)/ Interlayer (methyl violet =MV)/Semiconductor(p-InP) MIS structure presents a rectifying contact behavior. The values of ideality factor (n) and barrier height (BH) for the Ag/MV/p-InP MIS diode by using the current-voltage (I-V) measurement have been extracted as 1.21 and 0.84 eV, respectively. It was seen that the BH value of 0.84 eV calculated for the Ag/MV/p-InP MIS structure was significantly higher than the value of 0.64 eV of Ag/p-InP control contact. This situation was ascribed to the fact that the MV organic interlayer increased the effective barrier height by influencing the space charge region of inorganic semiconductor. The values of diffusion potential and barrier height for the Ag/MV/p-InP MIS diode by using the capacitance-voltage (C-V) measurement have been extracted as 1.21 V and 0.84 eV, respectively. The interface-state density of the Ag/MV/p-InP structure was seen to change from 2.57×1013 eV-1cm-2 to 2.19×1012 eV-1cm-2en_US
dc.publisherEuropean Journal of Interdisciplinary Studiesen_US
dc.rightsAttribution-NonCommercial-ShareAlike 3.0 United States*
dc.subjectOrganic Dye Filmen_US
dc.subjectMIS Diodeen_US
dc.subjectSeries Resistanceen_US
dc.subjectInterface Statesen_US
dc.titleBarrier modification by methyl violet organic dye molecules of Ag p InP structuresen_US
dc.relation.journalInternational Conference on Medicine and Natural Sciencesen_US
dc.contributor.departmentBatman Üniversitesi Fen - Edebiyat Fakültesi Fizik Bölümüen_US
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US

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