The effects of high-energy electron irradiation on the electrical characteristics of a lead/rhodamine-101/p-Si diode
CitationPakma, O., Güllü, Ö. (2017). The effects of high-energy electron irradiation on the electrical characteristics of a lead/rhodamine-101/p-Si diode. 3rd International Conference on Theoretical and Experimental Studies in Nuclear Applications and Technology, 10-12 May 2017, Adana.
High-energy radiation penetrates the metal-semiconductor (MS) interface and causes damage deep below the interface. Low-energy radiation causes severe lattice damage in the form of vacancies, interstitials and defect complexes at the near interface of the device. The one kind of the radiation is electron beam which is accelerated. Mills was the first to recognize that electrons with energy of 1 MeV would possess enough energy to displace an atom from its lattice position. This observation has led to the increased use of electron accelerators in radiation damage studies. This use has been motivated by two important facts. First, electron bombardment experiments permit the determination of the energy required to remove an atom from its initial position. This is done by increasing the energy of the electrons until an observable change in a radiation-sensitive property is seen. The second important basis for the use electrons lie in the fact that as long as the energy of the electrons is close to the displacement threshold, it is presumed, that only single Frenkel pairs are formed. Thus, many radiation-induced phenomena can be analyzed in terms of a single vacancy and/or interstitial atom, and one avoids the complication attendant upon the generation of complex damage regions presumed to occur in heavy-charged particle irradiation. In the present paper, a lead/rhodamine-101(Rh101)/p-Si metal/organic interlayer/ semi-conductor diode was fabricated and the effect of 6 MeV-electron irradiation on the electrical characteristics of the diode structure was investigated. It was seen that after electron irradiation the barrier height values, the series resistance values and ideality factors increased. Furthermore, it was seen that the capacitance values increased after electron irradiation. This was attributed to the change in dielectric constant at the interface and/or to decrease in the net ionized dopant concentration and the interface states. The degradation of the diode properties may be due to the introduction of electron irradiationinduced interfacial defects via displacement damage.