Current transport mechanism of Cu In1 x Gax S1 y sey 2 based heterojunction solar cells
CitationPakma, O., Eriş, F. (2015). Current transport mechanism of Cu In1 x Gax S1 y sey 2 based heterojunction solar cells. 9th International Physics Conference of the Balkan Physical Union, 24-27 August 2015, İstanbul.
In this study; temperature-dependent current-voltage measurements are used to determine the dominant currenttransport mechanism of ZnO/CdS/Cu(In,Ga)(S,Se)2 heterojunction solar cells. The dominant current-transport mechanism is mainly driven by changes in the Cu and S-stoichiometry. Whereas Cu and S rich devices are dominated by recombination at the CdS/absorber interface, bulk recombination in Cu and S poor devices irrespective of the band gab energy of the absorber.