I V and C V F characteristics of aniline green N type silicon diode
MetadataShow full item record
CitationÖzkan, S., Güllü, Ö., Arsel, İ., Özaydın, C., Pakma, O., Turut, A. (2015). I V and C V F characteristics of aniline green N type silicon diode. 9th International Physics Conference of the Balkan Physical Union, 24-27 August 2015, İstanbul.
We have studied the I-V, C-V and C-f characteristics of the Aniline Green (AG)/n-type Si structure. In organic/inorganic semiconductor contact applications, in order to keep the technological difficulties and unknowns to a minimum, silicon is generally chosen as the substrate semiconducting material. In this structure, deposition of organic materials on the inorganic semiconductor can generate large number of interface states at the semiconductor surface that strongly influence the electrical properties of the AG/n-Si structure. The values of the ideality factor, series resistance and barrier height obtained from two methods were compared, and it was seen that there was an agreement with each other. The downward concave curvature of the forward bias current-voltage characteristics at sufficiently large voltages is caused by the presence of the effect of series resistance. Thus, the concavity of the forward bias current-voltage characteristics increases with the increasing series resistance value. The high resistance values have given the high ideality factors. Also, the higher values of capacitance at low frequencies were attributed to the excess capacitance resulting from the interface states in equilibrium with the nSi that can follow the ac signal.