Browsing Fen - Edebiyat Fakültesi, Fizik Bölümü, Makale Koleksiyonu by Issue Date
Now showing items 1-20 of 50
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Determination of the laterally homogeneous barrier height of thermally annealed and unannealed Au/p-InP/Zn-Au Schottky barrier diodes
(Elsevier, 2008-03-25)We have identically prepared Au/p-InP Schottky barrier diodes (SBDs). The diodes were annealed up to 400 °C thermally. The barrier height (BH) for the as-deposited Au/p-InP/Zn-Au SBDs from the current–voltage characteristics ... -
Electrical analysis of organic interlayer based metal/interlayer/semiconductor diode structures
(Journal of Applied Physics, 2009-01)In this work, metal/interlayer/semiconductor (MIS) diodes formed by coating of an organic film to p-Si semiconductor substrate were prepared. Metal(Al)/interlayer (phenolsulfonphthalein=PSP)/semiconductor(p-Si) MIS device ... -
Analysis of the series resistance and interface state densities in metal semiconductor structures
(Journal of Physics: Conference Series, 2009-03)The electrical properties of Co/n-Si metal-semiconductor (MS) Schottky structure investigated at room temperature using current-voltage (I-V) characteristics. The characteristic parameters of the structure such as barrier ... -
Electrical properties of organic–ınorganic semiconductor device based on rhodamine-101
(SpringerLink, 2009-05)Rhodamine-101 (Rh101) thin films on n-type Si substrates have been formed by means of evaporation, thus Sn/Rh101/n-Si heterojunctions have been fabricated. The Sn/Rh101/n-Si devices are rectifying. The optical energy gaps ... -
Electrical characteristics of Co/n-Si schottky barrier diodes using I – V and C – V measurements electrical characteristics of Co/n-Si schottky barrier diodes using I – V and C – V measurements
(Chinese Physics Letters, 2009-06)Electrical characteristics of Co/n-Si Schottky barrier diodes are analysed by current-voltage (I – V) and capacitance-voltage (C – V) techniques at room temperature. The electronic parameters such as ideality factor, barrier ... -
The analysis of lateral distribution of barrier height in identically prepared Co/n-Si Schottky diodes
(Elsevier, 2009-11-03)We have studied the experimental linear relationship between ideality factors and barrier heights (BHs) for Co/n-Si metal–semiconductor (MS) structures with a doping density of about 1015 cm−3. The barrier heights for the ... -
Assessment of natural radiation exposure levels and mass attenuation coefficients of lime and gypsum samples used in Turkey
(Springer Nature, 2009-11-17)The activity concentrations of 226Ra, 232Th, and 40K in lime and gypsum samples used as building materials in Turkey were measured using gamma spectrometry. The mean activity concentrations of 226Ra, 232Th, and 40K were ... -
Radiation dose estimation and mass attenuation coefficients ofcement samples used in Turkey
(Elsevier, 2009-12-16)Different cement samples commonly used in building construction in Turkey have been analyzed for natural radioactivity using gamma-ray spectrometry. The mean activity concentrations observed in the cement samples were 52, ... -
A study of the rectifying behaviour of aniline green-based Schottky diode
(Elsevier, 2010-02)An Al/aniline green (AG)/Ga2Te3 device was fabricated and the current–voltage (I–V), capacitance–voltage (C–V) and capacitance–frequency (C–f) characteristics of the device have been investigated at room temperature. The ... -
Electronic properties of the metal organic interlayer inorganic semiconductor sandwich device
(Elsevier, 2010-03)In this study, we prepared a Metal(Al)/Organic Interlayer(Congo Red=CR)/Inorganic Semiconductor (p-Si) (MIS) Schottky device formed by coating of an organic film on p-Si semiconductor wafer. The Al/CR/p-Si MIS device had ... -
Electrical characterization of the Al/new fuchsin/n-Si organic-modified device
(Elsevier, 2010-03)The current–voltage (I–V) and the capacitance–voltage (C–V) characteristics of the Al/new fuchsin (NF)/n-Si device have been investigated at room temperature. The I–V characteristic of the device shows a good rectification. ... -
N-type InP Schottky diodes with organic thin layer: Electrical and interfacial properties
(Journal of Vacuum Science & Technology B, 2010-03)The rectifying junction characteristics of methyl red (MR) organic film on n-type InP substrate have been studied. It has been observed that MR-based structure shows an excellent rectifying behavior and that the MR film ... -
Optical and structural properties of CuO nanofilm Its diode application
(Elsevier, 2010-03-04)The high crystalline CuO nanofilms have been prepared by spin coating and annealing combined with a simple chemical method. The obtained films have been characterized by X-ray diffraction (XRD), Fourier transform infrared ... -
The analysis of the charge transport mechanism of n-Si/MEH-PPV device structure using forward bias I-V-T characteristics
(Elsevier, 2010-03-04)In this study, temperature dependent current-voltage (I-V) measurements and investigation of the dc current transport mechanism of n-Si/MEH-PPV device have been performed. While the series resistance value displayed strongly ... -
Ultrahigh (100%) barrier modification of n-InP Schottky diode by DNA biopolymer nanofilms
(Elsevier, 2010-04)Here I demonstrate that DNA biopolymer molecules can control the electrical characteristics of conventional Al/n-InP metal–semiconductor contacts. Results show that DNA increases an effective barrier height as high as 0.87 ... -
Silicon MIS diodes with Cr2O3 nanofilm Optical morphological structural and electronic transport properties
(Elsevier, 2010-04-15)In this work we report the optical, morphological and structural characterization and diode application of Cr2O3 nanofilms grown on p-Si substrates by spin coating and annealing process. X-ray diffraction (XRD), non-contact ... -
Electrical properties of safranine T p Si organic inorganic semiconductor devices
(Cambridge University, 2010-04-25)We investigated the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of identically prepared safranine T/p-Si organic/inorganic Schottky devices (total 26 diodes) formed by evaporation of organic compound ... -
Electrical analysis of organic dye based MIS Schottky contacts
(Microelectronic Engineering, 2010-05-25)In this work, we prepared metal/interlayer/semiconductor (MIS) diodes by coating of an organic film onp-Si substrate. Metal(Al)/interlayer(Orange G@OG)/semiconductor(p-Si) MIS structure had a good recti-fying behavior. By ... -
I-V-T analysing an inhomogeneous Au/Poly(4-vinyl phenol)/p-Si structure with a double gaussian distribution of barrier heights
(Springer Nature, 2010-12-29)In this study, the current-voltage (I-V) characteristics of Au/Poly(4-vinyl phenol)/p-Si structures have been measured over a wide temperature range (100-300 K). These structures have been analyzed according to thermionic ... -
Electronic properties of Al/DNA/p-Si MIS diode: Application as temperature sensor
(Elsevier, 2011-01)The current-voltage (I-V) measurements were performed in the temperature range (200-300 K) on Al/DNA/p-Si Schottky barrier type diodes. The Schottky diode shows non-ideal I-V behaviour with ideality factors n equal to 1.34 ...
