Browsing Fen - Edebiyat Fakültesi, Fizik Bölümü, Makale Koleksiyonu by Access Type "Attribution-NonCommercial-ShareAlike 3.0 United States"
Now showing items 1-20 of 36
-
Al/Nigrosin/p-Si yapıların fabrikasyonu ve temel diyot parametrelerinin hesaplanması
(Dicle Üniversitesi, 2018-09-25)Bu çalışmada π bağları açısından zengin organik molekülün (Nigrosin (NIG)) optik özellikleri UV-Vis yöntemiyle belirlendi. Cam altlık üzerinde damlatma yöntemi ile büyütülen NIG ince tabakasının direkt yasak enerji ... -
Analysis of electrical and photoelectrical properties of ZnO/p-InP heterojunction
(Elsevier, 2011-06)A ZnO/p-InP heterojunction has been fabricated by dc sputtering of ZnO on p-InP. It has been observed that the device has a good rectification. The electrical properties of the device such as ideality factor, barrier height, ... -
Analysis of interface states of Al/DNA/p-Si MIS photovoltaic structures with DNA biomolecules using the conductance technique
(Taylor & Francis, 2017-03-29)In this study, we report on the calculation of interface charge distribution of metal–interlayer–semiconductor (MIS) photovoltaic diodes containing DNA biomolecules and Si semiconductor based on the conductance technique. ... -
The analysis of the charge transport mechanism of n-Si/MEH-PPV device structure using forward bias I-V-T characteristics
(Elsevier, 2010-03-04)In this study, temperature dependent current-voltage (I-V) measurements and investigation of the dc current transport mechanism of n-Si/MEH-PPV device have been performed. While the series resistance value displayed strongly ... -
Analysis of the series resistance and interface state densities in metal semiconductor structures
(Journal of Physics: Conference Series, 2009-03)The electrical properties of Co/n-Si metal-semiconductor (MS) Schottky structure investigated at room temperature using current-voltage (I-V) characteristics. The characteristic parameters of the structure such as barrier ... -
Batman ilindeki ince film a-Si teknolojili fotovoltaik sistemin performans değerlendirmesi
(Balıkesir Üniversitesi, 2018-07-17)Bu çalışmada Batman ilinde ince film a-Si teknolojisine sahip 2.16 kWp güce sahip şebeke bağlantılı sistemin bir yıllık elektrik enerjisi üretim verileri alınmış ve modüllerin performansı dış parametrelerde göz önüne ... -
The characteristic diode parameters in Ti/p-InP contacts prepared by DC sputtering and evaporation processes over a wide measurement temperature
(World Scientific, 2017-06)The titanium/p-indium phosphide (Ti/p-InP) Schottky diodes (SDs) have been prepared by thermal evaporation and DC magnetron sputtering deposition. Then, their current-voltage (I-V) characteristics have been measured in the ... -
Characterization of an Au/n-Si photovoltaic structure with an organic thin film
(Elsevier, 2013-08)We demonstrate that a copper(II) organic complex can control the electrical characteristics of conventional Au/n-Si metal-semiconductor (MS) contacts. We investigated the electronic and photovoltaic properties of a Cu(II) ... -
Current density-voltage analyses and interface characterization in Ag/DNA/p-InP structures
(American Institute of Physics, 2012-02-15)The current density-voltage (J-V) characteristics of Ag/DNA/p-InP metal-insulator-semiconductor (MIS) structures have been investigated in room temperature. We have observed that the Ag/DNA/p-InP structure shows an excellent ... -
Current mechanism in HfO 2-gated metal-oxide-semiconductor devices
(Hindawi, 2012-06-19)The present study aimed to examine the current density-voltage (J-V) characteristics of Al/HfO2/p-Si (MOS) structure at temperatures ranging between 100 and 320 K and to determine the structure’s current transport mechanism. ... -
Electrical analysis of organic dye based MIS Schottky contacts
(Microelectronic Engineering, 2010-05-25)In this work, we prepared metal/interlayer/semiconductor (MIS) diodes by coating of an organic film onp-Si substrate. Metal(Al)/interlayer(Orange G@OG)/semiconductor(p-Si) MIS structure had a good recti-fying behavior. By ... -
Electrical analysis of organic interlayer based metal/interlayer/semiconductor diode structures
(Journal of Applied Physics, 2009-01)In this work, metal/interlayer/semiconductor (MIS) diodes formed by coating of an organic film to p-Si semiconductor substrate were prepared. Metal(Al)/interlayer (phenolsulfonphthalein=PSP)/semiconductor(p-Si) MIS device ... -
Electrical characteristics of Co/n-Si schottky barrier diodes using I – V and C – V measurements electrical characteristics of Co/n-Si schottky barrier diodes using I – V and C – V measurements
(Chinese Physics Letters, 2009-06)Electrical characteristics of Co/n-Si Schottky barrier diodes are analysed by current-voltage (I – V) and capacitance-voltage (C – V) techniques at room temperature. The electronic parameters such as ideality factor, barrier ... -
Electrical characterization of the Al/new fuchsin/n-Si organic-modified device
(Elsevier, 2010-03)The current–voltage (I–V) and the capacitance–voltage (C–V) characteristics of the Al/new fuchsin (NF)/n-Si device have been investigated at room temperature. The I–V characteristic of the device shows a good rectification. ... -
Electrical properties of organic–ınorganic semiconductor device based on rhodamine-101
(SpringerLink, 2009-05)Rhodamine-101 (Rh101) thin films on n-type Si substrates have been formed by means of evaporation, thus Sn/Rh101/n-Si heterojunctions have been fabricated. The Sn/Rh101/n-Si devices are rectifying. The optical energy gaps ... -
Electrical properties of safranine T p Si organic inorganic semiconductor devices
(Cambridge University, 2010-04-25)We investigated the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of identically prepared safranine T/p-Si organic/inorganic Schottky devices (total 26 diodes) formed by evaporation of organic compound ... -
Electronic parameters of high barrier Au/Rhodamine-101/n-Inp Schottky diode with organic interlayer
(Elsevier, 2012-01)In this work, we present that Rhodamine-101 (Rh-101) organic molecules can control the electrical characteristics of conventional Au/n-InP metal-semiconductor contacts. An Au/n-InP Schottky junction with Rh-101 interlayer ... -
Electronic properties of Al/DNA/p-Si MIS diode: Application as temperature sensor
(Elsevier, 2011-01)The current-voltage (I-V) measurements were performed in the temperature range (200-300 K) on Al/DNA/p-Si Schottky barrier type diodes. The Schottky diode shows non-ideal I-V behaviour with ideality factors n equal to 1.34 ... -
Electronic properties of the metal organic interlayer inorganic semiconductor sandwich device
(Elsevier, 2010-03)In this study, we prepared a Metal(Al)/Organic Interlayer(Congo Red=CR)/Inorganic Semiconductor (p-Si) (MIS) Schottky device formed by coating of an organic film on p-Si semiconductor wafer. The Al/CR/p-Si MIS device had ... -
High barrier Schottky diode with organic interlayer
(Elsevier, 2012-03)A new Cu/n-InP Schottky junction with organic dye (PSP) interlayer has been formed by using a solution cast process. An effective barrier height as high as 0.82 eV has been achieved for Cu/PSP/n-InP Schottky diodes, which ...
