Browsing Fen - Edebiyat Fakültesi, Fizik Bölümü, Makale Koleksiyonu by Language "eng"
Now showing items 1-20 of 45
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Ag-doped HfO2 thin films via sol–gel dip coating method
(Springer Nature, 2019-10-01)In this study, undoped and Ag-doped HfO2 thin films were deposited on glass substrates by means of sol–gel dip coating method. These films were then thermally annealed at 500 °C for 1 h. The structural and optical properties ... -
Analysis of electrical and photoelectrical properties of ZnO/p-InP heterojunction
(Elsevier, 2011-06)A ZnO/p-InP heterojunction has been fabricated by dc sputtering of ZnO on p-InP. It has been observed that the device has a good rectification. The electrical properties of the device such as ideality factor, barrier height, ... -
Analysis of interface states of Al/DNA/p-Si MIS photovoltaic structures with DNA biomolecules using the conductance technique
(Taylor & Francis, 2017-03-29)In this study, we report on the calculation of interface charge distribution of metal–interlayer–semiconductor (MIS) photovoltaic diodes containing DNA biomolecules and Si semiconductor based on the conductance technique. ... -
The analysis of lateral distribution of barrier height in identically prepared Co/n-Si Schottky diodes
(Elsevier, 2009-11-03)We have studied the experimental linear relationship between ideality factors and barrier heights (BHs) for Co/n-Si metal–semiconductor (MS) structures with a doping density of about 1015 cm−3. The barrier heights for the ... -
The analysis of the charge transport mechanism of n-Si/MEH-PPV device structure using forward bias I-V-T characteristics
(Elsevier, 2010-03-04)In this study, temperature dependent current-voltage (I-V) measurements and investigation of the dc current transport mechanism of n-Si/MEH-PPV device have been performed. While the series resistance value displayed strongly ... -
Analysis of the series resistance and interface state densities in metal semiconductor structures
(Journal of Physics: Conference Series, 2009-03)The electrical properties of Co/n-Si metal-semiconductor (MS) Schottky structure investigated at room temperature using current-voltage (I-V) characteristics. The characteristic parameters of the structure such as barrier ... -
Assessment of natural radiation exposure levels and mass attenuation coefficients of lime and gypsum samples used in Turkey
(Springer Nature, 2009-11-17)The activity concentrations of 226Ra, 232Th, and 40K in lime and gypsum samples used as building materials in Turkey were measured using gamma spectrometry. The mean activity concentrations of 226Ra, 232Th, and 40K were ... -
Barrier enhancement of Al/n-InP Schottky diodes by graphene oxide thin layer
(Scientific Publishers, 2019)In the present work, the surface morphology, structural and optical features of graphene oxide (GO) films are investigated. The Al/GO/n-InP MIS diode is formed by depositing GO layer on n-InP wafer for the barrier ... -
The characteristic diode parameters in Ti/p-InP contacts prepared by DC sputtering and evaporation processes over a wide measurement temperature
(World Scientific, 2017-06)The titanium/p-indium phosphide (Ti/p-InP) Schottky diodes (SDs) have been prepared by thermal evaporation and DC magnetron sputtering deposition. Then, their current-voltage (I-V) characteristics have been measured in the ... -
Characterization of an Au/n-Si photovoltaic structure with an organic thin film
(Elsevier, 2013-08)We demonstrate that a copper(II) organic complex can control the electrical characteristics of conventional Au/n-Si metal-semiconductor (MS) contacts. We investigated the electronic and photovoltaic properties of a Cu(II) ... -
Current density-voltage analyses and interface characterization in Ag/DNA/p-InP structures
(American Institute of Physics, 2012-02-15)The current density-voltage (J-V) characteristics of Ag/DNA/p-InP metal-insulator-semiconductor (MIS) structures have been investigated in room temperature. We have observed that the Ag/DNA/p-InP structure shows an excellent ... -
Current mechanism in HfO 2-gated metal-oxide-semiconductor devices
(Hindawi, 2012-06-19)The present study aimed to examine the current density-voltage (J-V) characteristics of Al/HfO2/p-Si (MOS) structure at temperatures ranging between 100 and 320 K and to determine the structure’s current transport mechanism. ... -
Determination of the laterally homogeneous barrier height of thermally annealed and unannealed Au/p-InP/Zn-Au Schottky barrier diodes
(Elsevier, 2008-03-25)We have identically prepared Au/p-InP Schottky barrier diodes (SBDs). The diodes were annealed up to 400 °C thermally. The barrier height (BH) for the as-deposited Au/p-InP/Zn-Au SBDs from the current–voltage characteristics ... -
Electrical analysis of organic dye based MIS Schottky contacts
(Microelectronic Engineering, 2010-05-25)In this work, we prepared metal/interlayer/semiconductor (MIS) diodes by coating of an organic film onp-Si substrate. Metal(Al)/interlayer(Orange G@OG)/semiconductor(p-Si) MIS structure had a good recti-fying behavior. By ... -
Electrical analysis of organic interlayer based metal/interlayer/semiconductor diode structures
(Journal of Applied Physics, 2009-01)In this work, metal/interlayer/semiconductor (MIS) diodes formed by coating of an organic film to p-Si semiconductor substrate were prepared. Metal(Al)/interlayer (phenolsulfonphthalein=PSP)/semiconductor(p-Si) MIS device ... -
Electrical characteristics of Co/n-Si schottky barrier diodes using I – V and C – V measurements electrical characteristics of Co/n-Si schottky barrier diodes using I – V and C – V measurements
(Chinese Physics Letters, 2009-06)Electrical characteristics of Co/n-Si Schottky barrier diodes are analysed by current-voltage (I – V) and capacitance-voltage (C – V) techniques at room temperature. The electronic parameters such as ideality factor, barrier ... -
Electrical characterization of the Al/new fuchsin/n-Si organic-modified device
(Elsevier, 2010-03)The current–voltage (I–V) and the capacitance–voltage (C–V) characteristics of the Al/new fuchsin (NF)/n-Si device have been investigated at room temperature. The I–V characteristic of the device shows a good rectification. ... -
Electrical properties of organic–ınorganic semiconductor device based on rhodamine-101
(SpringerLink, 2009-05)Rhodamine-101 (Rh101) thin films on n-type Si substrates have been formed by means of evaporation, thus Sn/Rh101/n-Si heterojunctions have been fabricated. The Sn/Rh101/n-Si devices are rectifying. The optical energy gaps ... -
Electrical properties of safranine T p Si organic inorganic semiconductor devices
(Cambridge University, 2010-04-25)We investigated the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of identically prepared safranine T/p-Si organic/inorganic Schottky devices (total 26 diodes) formed by evaporation of organic compound ... -
Electronic parameters of high barrier Au/Rhodamine-101/n-Inp Schottky diode with organic interlayer
(Elsevier, 2012-01)In this work, we present that Rhodamine-101 (Rh-101) organic molecules can control the electrical characteristics of conventional Au/n-InP metal-semiconductor contacts. An Au/n-InP Schottky junction with Rh-101 interlayer ...
