Browsing Fen - Edebiyat Fakültesi, Fizik Bölümü, Makale Koleksiyonu by Access Type "info:eu-repo/semantics/closedAccess"
Now showing items 1-16 of 16
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Analysis of electrical and photoelectrical properties of ZnO/p-InP heterojunction
(Elsevier, 2011-06)A ZnO/p-InP heterojunction has been fabricated by dc sputtering of ZnO on p-InP. It has been observed that the device has a good rectification. The electrical properties of the device such as ideality factor, barrier height, ... -
Analysis of interface states of Al/DNA/p-Si MIS photovoltaic structures with DNA biomolecules using the conductance technique
(Taylor & Francis, 2017-03-29)In this study, we report on the calculation of interface charge distribution of metal–interlayer–semiconductor (MIS) photovoltaic diodes containing DNA biomolecules and Si semiconductor based on the conductance technique. ... -
Assessment of natural radiation exposure levels and mass attenuation coefficients of lime and gypsum samples used in Turkey
(Springer Nature, 2009-11-17)The activity concentrations of 226Ra, 232Th, and 40K in lime and gypsum samples used as building materials in Turkey were measured using gamma spectrometry. The mean activity concentrations of 226Ra, 232Th, and 40K were ... -
Barrier enhancement of Al/n-InP Schottky diodes by graphene oxide thin layer
(Scientific Publishers, 2019)In the present work, the surface morphology, structural and optical features of graphene oxide (GO) films are investigated. The Al/GO/n-InP MIS diode is formed by depositing GO layer on n-InP wafer for the barrier ... -
The characteristic diode parameters in Ti/p-InP contacts prepared by DC sputtering and evaporation processes over a wide measurement temperature
(World Scientific, 2017-06)The titanium/p-indium phosphide (Ti/p-InP) Schottky diodes (SDs) have been prepared by thermal evaporation and DC magnetron sputtering deposition. Then, their current-voltage (I-V) characteristics have been measured in the ... -
Characterization of an Au/n-Si photovoltaic structure with an organic thin film
(Elsevier, 2013-08)We demonstrate that a copper(II) organic complex can control the electrical characteristics of conventional Au/n-Si metal-semiconductor (MS) contacts. We investigated the electronic and photovoltaic properties of a Cu(II) ... -
Current density-voltage analyses and interface characterization in Ag/DNA/p-InP structures
(American Institute of Physics, 2012-02-15)The current density-voltage (J-V) characteristics of Ag/DNA/p-InP metal-insulator-semiconductor (MIS) structures have been investigated in room temperature. We have observed that the Ag/DNA/p-InP structure shows an excellent ... -
Electronic parameters of high barrier Au/Rhodamine-101/n-Inp Schottky diode with organic interlayer
(Elsevier, 2012-01)In this work, we present that Rhodamine-101 (Rh-101) organic molecules can control the electrical characteristics of conventional Au/n-InP metal-semiconductor contacts. An Au/n-InP Schottky junction with Rh-101 interlayer ... -
Electronic parameters of MIS Schottky diodes with DNA biopolymer interlayer
(Walter de Gruyter, 2015-09-01)In this work, we prepared an ideal Cu/DNA/n-InP biopolymer-inorganic Schottky sandwich device formed by coating a n-InP semiconductor wafer with a biopolymer DNA. The Cu/DNA/n-InP contact showed a good rectifying behavior. ... -
Electronic properties of Al/DNA/p-Si MIS diode: Application as temperature sensor
(Elsevier, 2011-01)The current-voltage (I-V) measurements were performed in the temperature range (200-300 K) on Al/DNA/p-Si Schottky barrier type diodes. The Schottky diode shows non-ideal I-V behaviour with ideality factors n equal to 1.34 ... -
High barrier Schottky diode with organic interlayer
(Elsevier, 2012-03)A new Cu/n-InP Schottky junction with organic dye (PSP) interlayer has been formed by using a solution cast process. An effective barrier height as high as 0.82 eV has been achieved for Cu/PSP/n-InP Schottky diodes, which ... -
Morphological, structural and optical characteristics of graphene oxide layers and metal/interlayer/semiconductor photovoltaic diode application
(National Institute of Research and Development for Optoelectronics, 2018)This work describes the optical, morphological and structural characterizations of graphene oxide (GO) layers grown by drop casting and annealing process. UV-vis optical measurement shows that the values of direct and ... -
The optical characterization of organometallic complex thin films by spectroscopic ellipsometry and photovoltaic diode application
(Elsevier, 2016-05)In this work, organometallic complex (OMC) films have been deposited onto glass or silicon substrates by spin coating technique and their photovoltaic application potential has been investigated. Optical properties and ... -
Radiation dose estimation and mass attenuation coefficients ofcement samples used in Turkey
(Elsevier, 2009-12-16)Different cement samples commonly used in building construction in Turkey have been analyzed for natural radioactivity using gamma-ray spectrometry. The mean activity concentrations observed in the cement samples were 52, ... -
Synthesis and characterization of vanadium oxide thin films on different substrates
(Springer Nature, 2017-04-11)In this study, the V8O15 derivative of vanadium oxide was produced on plain glass, indium tin oxide and silicon wafer substrate layers by taking advantage of wet chemical synthesis which is an easy and economical method. ... -
Wet chemical methods for producing mixing crystalline phase ZrO 2 thin film
(Elsevier, 2016-07)The aim of the study is to develop a more economical and easier method for obtaining ZrO 2 thin films at lower temperature, unlike the ones mentioned in the literature. For this purpose, wet chemical synthesis methods have ...
