Güllü, ÖmerPakma, OsmanTurut, AbdulmecitArsel, İsmail2021-04-192021-04-192015-05Güllü, Ö., Pakma, O., Turut, A., Arsel, İ. (2015). Electrical characteristics of the Al/Congo Red (CR)/p-Si semiconductor diodes. Adım Fizik Günleri IV, 28 – 29 Mayıs 2015, Kütahyahttps://adimfizik4.dpu.edu.tr/https://hdl.handle.net/20.500.12402/2934In this work, we have studied the electrical characteristics of the Al/CR/p-Si MIS Schottky structures formed by coating of the organic material directly on p-Si substrate. It has been seen that the CR thin film on the p-Si substrate has indicated a good rectifying behavior. The barrier height and the ideality factor of the device have been calculated from the I-V characteristic. We have also studied the suitability and possibility of the MIS diodes for use in barrier modification of Si MS diodes. In addition, we have compared the parameters of the Al/CR/p-Si MIS Schottky diodes with those of conventional Al/p-Si MS diodes. We have observed that the b value of 0.77 eV obtained for the Al/CR/p-Si device was significantly larger than BH value of the conventional Al/p-Si MS contact. Thus, the modification of the interfacial potential barrier for metal/Si diodes has been achieved by using the CR organic interlayer. This was attributed to the fact that the CR interlayer increased the effective b by influencing the space charge region of Si. The interface-state density of the MIS diode was found to vary from 1.24×1013 eV-1 cm-2 to 2.44×1012 eV-1 cm-2.eninfo:eu-repo/semantics/openAccessAttribution-NonCommercial-ShareAlike 3.0 United StatesMIS DiodeSchottky BarrierIdeality FactorCongo RedDyeConference Object