Güllü, ÖmerTurut, Abdulmecit2021-04-142021-04-142010-05-25Güllü, Ö., Turut, A. (2010). Electrical analysis of organic dye based MIS Schottky contacts. Microelectronic Engineering, 87(12), pp.2482-2487.https://dx.doi.org/10.1016/j.mee.2010.05.00401679317https://dx.doi.org/10.1016/j.mee.2010.05.004https://hdl.handle.net/20.500.12402/2869In this work, we prepared metal/interlayer/semiconductor (MIS) diodes by coating of an organic film onp-Si substrate. Metal(Al)/interlayer(Orange G@OG)/semiconductor(p-Si) MIS structure had a good recti-fying behavior. By using the forward-biasI–Vcharacteristics, the values of ideality factor (n) and barrierheight (BH) for the Al/OG/p-Si MIS diode were obtained as 1.73 and 0.77 eV, respectively. It was seen thatthe BH value of 0.77 eV calculated for the Al/OG/p-Si MIS diode was significantly larger than the value of0.50 eV of conventional Al/p-Si Schottky diodes. Modification of the potential barrier of Al/p-Si diode wasachieved by using thin interlayer of the OG organic material. This was attributed to the fact that the OGorganic interlayer increased the effective barrier height by influencing the space charge region of Si. Theinterface-state density of the MIS diode was found to vary from 2.79x1013to 5.80x1012eVx1cmx2.eninfo:eu-repo/semantics/restrictedAccessAttribution-NonCommercial-ShareAlike 3.0 United StatesSchottky DiodeInterface StatesSeries ResistanceOrganic Thin FilmArticle871224822487N/AN/A