Güllü, ÖmerTürüt, Abdülmecit2019-07-052019-07-052011-01Güllü, Ö, Türüt, A. (2011). Electronic properties of Al/DNA/p-Si MIS diode: Application as temperature sensor. Journal of Alloys and Compounds, 509(3), pp. 571-577. https://doi.org/10.1016/j.jallcom.2010.09.1460925-8388https://doi.org/10.1016/j.jallcom.2010.09.146https://hdl.handle.net/20.500.12402/2218The current-voltage (I-V) measurements were performed in the temperature range (200-300 K) on Al/DNA/p-Si Schottky barrier type diodes. The Schottky diode shows non-ideal I-V behaviour with ideality factors n equal to 1.34 ± 0.02 and 1.70 ± 0.02 at 300 K and 200 K, respectively, and is thought to have a metal-interface layer-semiconductor (MIS) configuration. The zero-bias barrier height Φb determined from the I-V measurements was 0.75 ± 0.01 eV at 300 K and decreases to 0.61 ± 0.01 eV at 200 K. The forward voltage-temperature (VF-T) characteristics were obtained from the I-V measurements in the temperature range 200-300 K at different activation currents (IF) in the range 20 nA-6 μA. The VF-T characteristics were linear for three activation currents in the diode. From the VF-T characteristics at 20 nA, 100 nA and 6 μA, the values of the temperature coefficients of the forward bias voltage (dV F/dT) for the diode were determined as -2.30 mV K-1, -2.60 mV K-1 and -3.26 mV K-1 with a standard error of 0.05 mV K-1, respectively.eninfo:eu-repo/semantics/closedAccessAttribution-NonCommercial-ShareAlike 3.0 United StatesBarrier HeightsDNAIdeality FactorMetal-Semiconductor StructuresSiliconArticle5093571577Q1Q1