Güllü, Ömer2021-04-142021-04-142010-04Güllü, Ö. (2010). Ultrahigh (100%) barrier modification of n-InP Schottky diode by DNA biopolymer nanofilms. Microelectronic Engineering. 87(4). pp.648-651. https://doi.org/10.1016/j.mee.2009.09.00101679317https://doi.org/10.1016/j.mee.2009.09.001https://hdl.handle.net/20.500.12402/2881Here I demonstrate that DNA biopolymer molecules can control the electrical characteristics of conventional Al/n-InP metal–semiconductor contacts. Results show that DNA increases an effective barrier height as high as 0.87 eV by influencing the space charge region of n-InP device with a good rectifying behavioreninfo:eu-repo/semantics/restrictedAccessAttribution-NonCommercial-ShareAlike 3.0 United StatesDNABiopolymerSchottky BarrierIdeality FactorInPArticle874648651N/AN/A