Güllü, ÖmerÇankaya, MuratRajagopal Reddy, Varra2019-06-172019-06-172019Güllü, Ö., Çankaya, M., Rajagopal Reddy, V. (2019). Barrier enhancement of Al/n-InP Schottky diodes by graphene oxide thin layer. Indian Journal of Physics, 93 (4), pp. 467-474. https://doi.org/10.1007/s12648-018-1311-40973-1458https://hdl.handle.net/20.500.12402/2046https://doi.org/10.1007/s12648-018-1311-4In the present work, the surface morphology, structural and optical features of graphene oxide (GO) films are investigated. The Al/GO/n-InP MIS diode is formed by depositing GO layer on n-InP wafer for the barrier enhancement. Interfacial properties of the MIS diode with GO interlayer are extracted from current–voltage (I–V) measurement. The simple diode parameters such as barrier height and ideality factor are extracted from I–V plots, and the values are compared with those of conventional Al/n-InP MS contact. The value of barrier height (BH) for the Al/GO/n-InP contact is found as 0.85 eV. The BH value of 0.85 eV of the Al/GO/n-InP MIS structure is as high as around 100% compared to the value of 0.43 eV of the Al/n-InP reference contacts. We have showed that the value of 0.85 eV is one of the highest values presented for reference contacts with an interlayer.eninfo:eu-repo/semantics/closedAccessAttribution-ShareAlike 3.0 United StatesGraphene OxideThin FilmsBand GapMIS DiodeX-ray DiffractionArticle934467474Q3Q3