Yıldırım, NezirTurut, AbdulmecitTurut, Veyis2021-04-202021-04-202010-11Yıldırım, N., Turut, A., Turut, V. (2010). The theoretical and experimental study on double-Gaussian distribution in inhomogeneous barrier-height Schottky contacts. Microelectronic Engineering, 87 (11), pp. 2225-2229. https://doi.org/10.1016/j.mee.2010.02.0070167-9317https://doi.org/10.1016/j.mee.2010.02.007https://hdl.handle.net/20.500.12402/2953We have considered multi-Gaussian distribution of barrier-heights for non-interactive barrier inhomogeneities in the inhomogeneous Schottky diodes, and we have shown the presence of the intersecting behavior in the forward-bias current-voltage (I-V) curves for the double-Gaussian distribution model at low temperatures. We have tried to eliminate this effect by generating I-V curves at lower temperatures with the bias-dependent barrier-height expression which leads to the ideality factors greater than unity. For this calculation, we have obtained the expressions for the barrier-height change and ideality factor, and for bias-dependency of the BH for the multi-Gaussian model by following the literature. We have shown that the experimental forward-bias I-V curves coincide with the theoretical ones using the bias-dependent inhomogeneous BH expression at low and high temperatures in the double-Gaussian distribution of BHs.eninfo:eu-repo/semantics/embargoedAccessAttribution-NonCommercial-ShareAlike 3.0 United StatesBarrier InhomogeneityDouble-Gaussian DistributionSchottky Barrier DiodeArticle871122252229Q2Q2