Browsing by Author "Pakma, Osman"
Now showing items 1-20 of 47
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Ag katkılı metal/HfO2/c-Si yapılarının elektriksel özelliklerinin incelenmesi
Demir, Arif (Batman Üniversitesi Fen Bilimleri Enstitüsü, 2021-06-23)Bu tez çalışmasında katkısız ve gümüş (Ag) katkılı HfO2 ince filmler p-Si yüzeylere sol-jel daldırma metoduyla kaplanmış; yüzey analizleri X-ışını kırınım desenleri (XRD) ile incelenmiş ve elektriksel karakterizayonları ... -
Ag-doped HfO2 thin films via sol–gel dip coating method
Pakma, Osman; Kaval, Şehmus; Kari̇per, İshak Afşin (Springer Nature, 2019-10-01)In this study, undoped and Ag-doped HfO2 thin films were deposited on glass substrates by means of sol–gel dip coating method. These films were then thermally annealed at 500 °C for 1 h. The structural and optical properties ... -
Analysis of frequency dependent interface state density and series resistance of Al CZTSeS n Si schottky diode
Yüksel, Ömer Faruk; Tuğluoğlu, Nihat; Pakma, Osman; Özel, Faruk (Ulusal Fotovoltaik Teknoloji Platformu, 2016) -
The analysis of the charge transport mechanism of n-Si/MEH-PPV device structure using forward bias I-V-T characteristics
Kavasoğlu, Abdülkadir Sertap; Yakuphanoğlu, Fahrettin; Kavasoğlu, Neşe; Pakma, Osman; Birgi, Özcan; Oktik, Şener (Elsevier, 2010-03-04)In this study, temperature dependent current-voltage (I-V) measurements and investigation of the dc current transport mechanism of n-Si/MEH-PPV device have been performed. While the series resistance value displayed strongly ... -
Batman ilindeki ince film a-Si teknolojili fotovoltaik sistemin performans değerlendirmesi
Pakma, Osman (Balıkesir Üniversitesi, 2018-07-17)Bu çalışmada Batman ilinde ince film a-Si teknolojisine sahip 2.16 kWp güce sahip şebeke bağlantılı sistemin bir yıllık elektrik enerjisi üretim verileri alınmış ve modüllerin performansı dış parametrelerde göz önüne ... -
Batman'da farklı teknolojilere sahip fotovoltaik modüllerin performans karşılaştırması
Öztürker, Hakkı (Batman Üniversitesi, 2016)Bu tez çalışmasında Batman ilinde farklı teknolojilere sahip kurulu toplamda 6,46 kWp güce sahip şebeke bağlantılı sistemin bir yıllık verileri alınmış ve modül performans karşılaştırmaları dış parametrelere göre ... -
Current density-voltage analyses and interface characterization in Ag/DNA/p-InP structures
Güllü, Ömer; Pakma, Osman; Türüt, Abdülmecit (American Institute of Physics, 2012-02-15)The current density-voltage (J-V) characteristics of Ag/DNA/p-InP metal-insulator-semiconductor (MIS) structures have been investigated in room temperature. We have observed that the Ag/DNA/p-InP structure shows an excellent ... -
Current mechanism in HfO 2-gated metal-oxide-semiconductor devices
Pakma, Osman (Hindawi, 2012-06-19)The present study aimed to examine the current density-voltage (J-V) characteristics of Al/HfO2/p-Si (MOS) structure at temperatures ranging between 100 and 320 K and to determine the structure’s current transport mechanism. ... -
Current transport mechanism of Cu In1 x Gax S1 y sey 2 based heterojunction solar cells
Pakma, Osman; Eriş, Ferhat (İstanbul University, 2015)In this study; temperature-dependent current-voltage measurements are used to determine the dominant currenttransport mechanism of ZnO/CdS/Cu(In,Ga)(S,Se)2 heterojunction solar cells. The dominant current-transport mechanism ... -
Design of PV energy system in Batman Turkey
Pakma, Nilay; Pakma, Osman; Güllü, Ömer (AIP Conf.Proc., 2017) -
Determination of main parameters of Au/n-Si diodes with and without nitropyridine conjugated anthracene (NAMA) layer from current-voltage characteristics
Ongun, Onur; Eymur, Serkan; Pakma, Osman; Yüksel, Ömer Faruk; Sayın, Serkan; Tezcan, Ali Osman; Börekçi, Nazmiye; Tuğluoğlu, Nihat (Selçuk Üniversitesi, 2017) -
The effects of high-energy electron irradiation on the electrical characteristics of a lead/rhodamine-101/p-Si diode
Güllü, Ömer; Pakma, Osman (Çukurova Üniversitesi, 2017)High-energy radiation penetrates the metal-semiconductor (MS) interface and causes damage deep below the interface. Low-energy radiation causes severe lattice damage in the form of vacancies, interstitials and defect ... -
Electrical and photoresponse characteristics of Al/CZTSeS/n-Si schottky photodiode
Yüksel, Ömer Faruk; Tuğluoğlu, Nihat; Pakma, Osman; Özel, Faruk (Selçuk Üniversitesi, 2017) -
Electrical characteristics of the Al/Congo Red (CR)/p-Si semiconductor diodes
Güllü, Ömer; Pakma, Osman; Turut, Abdulmecit; Arsel, İsmail (Dumlupınar Üniversitesi, 2015-05)In this work, we have studied the electrical characteristics of the Al/CR/p-Si MIS Schottky structures formed by coating of the organic material directly on p-Si substrate. It has been seen that the CR thin film on the ... -
Electrical parameters of safranine T N silicon contacts
Güllü, Ömer; Arsel, İsmail; Özkan, Samet; Özaydın, Cihat; Pakma, Osman; Turut, Abdülmecit (İstanbul University, 2015)In this work, it has been investigated current-voltage (I-V) andcapacitance-voltage-frequency (C-V-f) characteristics of the Al/SafranineT(ST)/n-Si structure. The values of the ideality factor, series resistance and barrier ... -
Frequency dependent interface state properties of a schottky device based on coronene deposited on n-type silicon by spin coating technique
Yüksel, Ömer Faruk; Pakma, Osman; Tuğluoğlu, Nihat (Ulusal Fotovoltaik Teknoloji Platformu, 2016) -
Frequency dependent of capacitance-voltage and conductance-voltage characteristics of Au/9-[(5-Nitropyridin-2-aminoethyl) iminiomethyl]-anthracene (NAMA)/n-Si diode
Ongun, Onur; Eymur, Serkan; Pakma, Osman; Yüksel, Ömer Faruk; Sayın, Serkan; Tezcan, Ali Osman; Börekçi, Nazmiye; Tuğluoğlu, Nihat (Selçuk Üniversitesi, 2017) -
I V and C V F characteristics of aniline green N type silicon diode
Özkan, Samet; Güllü, Ömer; Arsel, İsmail; Özaydın, Cihat; Pakma, Osman; Turut, Abdülmecit (İstanbul University, 2015)We have studied the I-V, C-V and C-f characteristics of the Aniline Green (AG)/n-type Si structure. In organic/inorganic semiconductor contact applications, in order to keep the technological difficulties and unknowns to ...
