Browsing Fen - Edebiyat Fakültesi, Fizik Bölümü, Makale Koleksiyonu by Access Type "info:eu-repo/semantics/restrictedAccess"
Now showing items 1-11 of 11
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Al/Nigrosin/p-Si yapıların fabrikasyonu ve temel diyot parametrelerinin hesaplanması
(Dicle Üniversitesi, 2018-09-25)Bu çalışmada π bağları açısından zengin organik molekülün (Nigrosin (NIG)) optik özellikleri UV-Vis yöntemiyle belirlendi. Cam altlık üzerinde damlatma yöntemi ile büyütülen NIG ince tabakasının direkt yasak enerji ... -
The analysis of lateral distribution of barrier height in identically prepared Co/n-Si Schottky diodes
(Elsevier, 2009-11-03)We have studied the experimental linear relationship between ideality factors and barrier heights (BHs) for Co/n-Si metal–semiconductor (MS) structures with a doping density of about 1015 cm−3. The barrier heights for the ... -
Determination of the laterally homogeneous barrier height of thermally annealed and unannealed Au/p-InP/Zn-Au Schottky barrier diodes
(Elsevier, 2008-03-25)We have identically prepared Au/p-InP Schottky barrier diodes (SBDs). The diodes were annealed up to 400 °C thermally. The barrier height (BH) for the as-deposited Au/p-InP/Zn-Au SBDs from the current–voltage characteristics ... -
Electrical analysis of organic dye based MIS Schottky contacts
(Microelectronic Engineering, 2010-05-25)In this work, we prepared metal/interlayer/semiconductor (MIS) diodes by coating of an organic film onp-Si substrate. Metal(Al)/interlayer(Orange G@OG)/semiconductor(p-Si) MIS structure had a good recti-fying behavior. By ... -
Electrical properties of organic–ınorganic semiconductor device based on rhodamine-101
(SpringerLink, 2009-05)Rhodamine-101 (Rh101) thin films on n-type Si substrates have been formed by means of evaporation, thus Sn/Rh101/n-Si heterojunctions have been fabricated. The Sn/Rh101/n-Si devices are rectifying. The optical energy gaps ... -
Electrical properties of safranine T p Si organic inorganic semiconductor devices
(Cambridge University, 2010-04-25)We investigated the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of identically prepared safranine T/p-Si organic/inorganic Schottky devices (total 26 diodes) formed by evaporation of organic compound ... -
Electronic properties of the metal organic interlayer inorganic semiconductor sandwich device
(Elsevier, 2010-03)In this study, we prepared a Metal(Al)/Organic Interlayer(Congo Red=CR)/Inorganic Semiconductor (p-Si) (MIS) Schottky device formed by coating of an organic film on p-Si semiconductor wafer. The Al/CR/p-Si MIS device had ... -
N-type InP Schottky diodes with organic thin layer: Electrical and interfacial properties
(Journal of Vacuum Science & Technology B, 2010-03)The rectifying junction characteristics of methyl red (MR) organic film on n-type InP substrate have been studied. It has been observed that MR-based structure shows an excellent rectifying behavior and that the MR film ... -
Room temperature I–V and C–V characteristics of Au/mTPP/p-Si organic MIS devices
(The European Physical Journal Applied Physics, 2018-05-02)The room temperature electrical characteristics of the organic Au/mTPP/p-Si device fabricated by spin coating method were investigated with I–V and C–V measurements. It has been determined that the device has a high ... -
A study of the rectifying behaviour of aniline green-based Schottky diode
(Elsevier, 2010-02)An Al/aniline green (AG)/Ga2Te3 device was fabricated and the current–voltage (I–V), capacitance–voltage (C–V) and capacitance–frequency (C–f) characteristics of the device have been investigated at room temperature. The ... -
Ultrahigh (100%) barrier modification of n-InP Schottky diode by DNA biopolymer nanofilms
(Elsevier, 2010-04)Here I demonstrate that DNA biopolymer molecules can control the electrical characteristics of conventional Al/n-InP metal–semiconductor contacts. Results show that DNA increases an effective barrier height as high as 0.87 ...
