Electrical properties of organic–ınorganic semiconductor device based on rhodamine-101

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dc.authorid0000-0002-3785-6190en_US
dc.contributor.authorGüllü, Ömer
dc.contributor.authorTurut, Abdulmecit
dc.contributor.authorYıldırım, Nezir
dc.contributor.authorÇakar, Muzaffer
dc.date.accessioned2021-04-14T13:21:59Z
dc.date.available2021-04-14T13:21:59Z
dc.date.issued2009-05en_US
dc.departmentBatman Üniversitesi Fen - Edebiyat Fakültesi Fizik Bölümüen_US
dc.description.abstractRhodamine-101 (Rh101) thin films on n-type Si substrates have been formed by means of evaporation, thus Sn/Rh101/n-Si heterojunctions have been fabricated. The Sn/Rh101/n-Si devices are rectifying. The optical energy gaps have been determined from the absorption spectra in the wavelength range of 400 nm to 700 nm. Rh101 has been characterized by direct optical absorption with an optical edge at 2.05 ± 0.05 eV and by indirect optical absorption with␣an optical edge at 1.80 ± 0.05 eV. It was demonstrated that trap-charge-limited current is the dominant transport mechanism at large forward bias. A␣mobility value of μ = 7.31 × 10−6 cm2 V−1 s−1 for Rh101 has been obtained from the forward-bias current–voltage characteristics.en_US
dc.identifier.citationGüllü, Ö., Turut, A., Yıldırım, N., Çakar, M. (2009). Electrical properties of organic–ınorganic semiconductor device based on rhodamine-101. Journal of Electronic Materials, 38. pp.1995-1999. https://dx.doi.org/10.1007/s11664-009-0838-8en_US
dc.identifier.endpage1999en_US
dc.identifier.scopusqualityN/Aen_US
dc.identifier.startpage1995en_US
dc.identifier.urihttps://dx.doi.org/10.1007/s11664-009-0838-8
dc.identifier.urihttps://hdl.handle.net/20.500.12402/2883
dc.identifier.volume38en_US
dc.identifier.wosqualityN/Aen_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherSpringerLinken_US
dc.relation.isversionof10.1007/s11664-009-0838-8en_US
dc.relation.journalJournal of Electronic Materialsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/restrictedAccessen_US
dc.rightsAttribution-NonCommercial-ShareAlike 3.0 United States*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/3.0/us/*
dc.subjectOrganic–İnorganic Contactsen_US
dc.subjectSchottky Barrieren_US
dc.subjectOrganic Semiconductoren_US
dc.subjectRhodamine 101en_US
dc.titleElectrical properties of organic–ınorganic semiconductor device based on rhodamine-101en_US
dc.typeArticleen_US

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