MOS yapıların dielektrik uygulamaları için vanadyum oksit ince filmlerin incelenmesi
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Tarih
2019-12-25
Yazarlar
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Yayıncı
Batman Üniversitesi Fen Bilimleri Enstitüsü
Erişim Hakkı
info:eu-repo/semantics/openAccess
Attribution-ShareAlike 3.0 United States
Attribution-ShareAlike 3.0 United States
Özet
Bu çalışmada V3O7 ve V8O15 ince filmler sol-jel daldırma yöntemiyle cam ve p-Si yarıiletken yüzeyler üzerine kaplanmış; AFM ile yüzey yapısı araştırılmış, XRD ile filmlerin polikristal yönelmeleri ve kristal yapıları incelenmiştir. EDX ile filim muhtevası araştırılmış. UV-VIS ölçümleri ile optik özellikleri araştırılmıştır. Elde edilen filmlerden Al/VOx /p-Si/Al MOS yapılar oluşturularak akım-gerilim, kapasite-gerilim-frekans yöntemleriyle elektriksel ve fiziksel özellikler incelenmiştir. İnce filmleri elde etmek için %99 saflıkta V2O5 tozu, HCl, HNO3, H2O2 çözücülerinin farklı birleşimleri içinde çözünerek homojen çözeltiler elde edilmiş ve kaplanacak olan cam veya p-Si yüzey bu çözelti içerisine 600 m/s hızla daldırılmıştır. Bu şekilde kaplanan yüzey öncelikle 300 derece 5 dakika tavlama işlemine tabi tutulmuş 10. kattan sonra 400 ile 500 derece arasında değişen sıcaklıkta 1 saat tavlamaya tabi tutulmuştur. MOS yapılar elde etmek için p-Si üzerine elde edilen filmlerin bir tarafı buharlaştırma yöntemiyle Al kaplanmış, diğer tarafı yine buharlaştırma yöntemiyle delikli maske kullanılarak Al kaplanmıştır.
In this study, V3O7 and V8O15 thin films were coated on glass and p-Si semiconductor surfaces by sol-gel dipping method; Surface structure was investigated by AFM, polycrystalline orientation and crystal structure of the films were examined by XRD. Film content was investigated with EDX. Optical properties were investigated by UV-VIS measurements. Al / p-Si / VOx / Al MOS structures were obtained from the obtained films then electrical and physical properties were examined by current-voltage, capacity-voltage-frequency methods. In order to obtain thin films, 99% pure V2O5 powder was dissolved in different combinations of HCl, HNO3, H2O2 solvents. After homogeneous solutions were obtained glass or p-Si surface to be coated was dipped into this solution at 600 m / s. The coated surface was exposed to annealing at 300 degrees for 5 minutes. After the 10th layer coated film annealed for 1 hour at a temperature between 400 and 500 degrees. In order to obtain MOS structures, p-Si substrate were coated with Al by evaporation technique. The other side of the film firstly coated by VOx by the same technique above the film was then coated with Al using a mask.
In this study, V3O7 and V8O15 thin films were coated on glass and p-Si semiconductor surfaces by sol-gel dipping method; Surface structure was investigated by AFM, polycrystalline orientation and crystal structure of the films were examined by XRD. Film content was investigated with EDX. Optical properties were investigated by UV-VIS measurements. Al / p-Si / VOx / Al MOS structures were obtained from the obtained films then electrical and physical properties were examined by current-voltage, capacity-voltage-frequency methods. In order to obtain thin films, 99% pure V2O5 powder was dissolved in different combinations of HCl, HNO3, H2O2 solvents. After homogeneous solutions were obtained glass or p-Si surface to be coated was dipped into this solution at 600 m / s. The coated surface was exposed to annealing at 300 degrees for 5 minutes. After the 10th layer coated film annealed for 1 hour at a temperature between 400 and 500 degrees. In order to obtain MOS structures, p-Si substrate were coated with Al by evaporation technique. The other side of the film firstly coated by VOx by the same technique above the film was then coated with Al using a mask.
Açıklama
Anahtar Kelimeler
İnce Film, MOS, V3O7, V8O15, Vanadyum Oksit, Thin Film, Vanadium Oxide
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Künye
Bilgen, Y. (2019). MOS yapıların dielektrik uygulamaları için vanadyum oksit ince filmlerin incelenmesi. (Yayınlanmamış Doktora Tezi). Batman Üniversitesi Fen Bilimleri Enstitüsü, Batman.
