Fabrication and electrical characterization of ZnO SiO2 p Si structure with outsized diode factor

dc.authorid0000-0001-7249-2700en_US
dc.authorid0000-0001-6758-5574en_US
dc.authorid0000-0002-3098-0973en_US
dc.contributor.authorKavasoğlu, Neşe
dc.contributor.authorKavasoğlu, Abdülkadir Sertap
dc.contributor.authorPakma, Osman
dc.contributor.authorKabakçı, Murat
dc.contributor.authorBirgi, Özcan
dc.contributor.authorOktik, Şener
dc.date.accessioned2021-04-15T09:21:32Z
dc.date.available2021-04-15T09:21:32Z
dc.date.issued2010en_US
dc.departmentBatman Üniversitesi Fen - Edebiyat Fakültesi Fizik Bölümüen_US
dc.description.abstracten_US
dc.identifier.citationKavasoğlu, N., Kavasoğlu, A. S., Pakma, O., Kabakçı, M., Birgi, Ö., Oktik, Ş. (2010). Fabrication and electrical characterization of ZnO SiO2 p Si structure with outsized diode factor. The 25th European Photovoltaic Solar Energy Conference, 6-10 September 2010, Valencia, Spain.en_US
dc.identifier.urihttps://hdl.handle.net/20.500.12402/2894
dc.language.isoenen_US
dc.publisherEuropean Unionen_US
dc.relation.journalThe 25th European Photovoltaic Solar Energy Conference, 6-10 September 2010en_US
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.titleFabrication and electrical characterization of ZnO SiO2 p Si structure with outsized diode factoren_US
dc.typeConference Objecten_US

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