Analysis of interface states of Al/DNA/p-Si MIS photovoltaic structures with DNA biomolecules using the conductance technique
Yükleniyor...
Tarih
2017-03-29
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Taylor & Francis
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Attribution-NonCommercial-ShareAlike 3.0 United States
Attribution-NonCommercial-ShareAlike 3.0 United States
Özet
In this study, we report on the calculation of interface charge distribution of metal–interlayer–semiconductor (MIS) photovoltaic diodes containing DNA biomolecules and Si semiconductor based on the conductance technique. DNA biofilms were deposited at room temperature using a simple cast method on p-type Si. Interface parameters of the Al/DNA/p-Si structures were investigated by using capacitance–voltage (C–V) and conductance–voltage (G–V) measurements as a function of frequency. The distributions of interfacial charge states and the trap relaxation times were reported. Also, photoelectric and photocapacitance properties of the diode were measured at room temperature.
Açıklama
Anahtar Kelimeler
Biopolymers, Conductance Method, Junction Diodes, Metal–Insulator–Semiconductor Structures
Kaynak
WoS Q Değeri
Q4
Scopus Q Değeri
Q2
Cilt
32
Sayı
8
Künye
Güllü, Ö. (2017). Analysis of interface states of Al/DNA/p-Si MIS photovoltaic structures with DNA biomolecules using the conductance technique. Materials Technology, 32(8), pp. 505-513. https://doi.org/10.1080/10667857.2017.1305640
