Electronic properties of Cu/n-InP metal-semiconductor structures with cytosine biopolymer

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dc.authorid0000-0002-3785-6190en_US
dc.contributor.authorGüllü, Ömer
dc.contributor.authorTürüt, Abdülmecit
dc.date.accessioned2019-07-05T10:31:37Z
dc.date.available2019-07-05T10:31:37Z
dc.date.issued2015-09en_US
dc.departmentBatman Üniversitesi Fen - Edebiyat Fakültesi Fizik Bölümüen_US
dc.description.abstractThis work shows that cytosine biomolecules can control the electrical characteristics of conventional Cu/n-InP metal-semiconductor contacts. A new Cu/n-InP Schottky junction with cytosine interlayer has been formed by using a drop cast process. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of Cu/cytosine/n-InP structure were investigated at room temperature. A potential barrier height as high as 0.68 eV has been achieved for Cu/cytosine/n-InP Schottky diodes, which have good I-V characteristics. This good performance is attributed to the effect of interfacial biofilm between Cu and n-InP. By using C-V measurement of the Cu/cytosine/n-InP Schottky diode the diffusion potential and the barrier height have been calculated as a function of frequency. Also, the interface-state density of the Cu/cytosine/n-InP diode was found to vary from 2:24 × 1013 eV-1cm-2 to 5.56× 1012 eV-1 cm-2.en_US
dc.identifier.citationGüllü, Ö, Türüt, A. (2015). Electronic Properties of Cu/n-InP Metal-Semiconductor Structures with Cytosine Biopolymer. Acta Physica Polonica A, 128(2), pp. 383-389. https://doi.org/10.12693/aphyspola.128.383en_US
dc.identifier.endpage389en_US
dc.identifier.issn0587-4246
dc.identifier.issue2en_US
dc.identifier.scopusqualityQ4en_US
dc.identifier.startpage383en_US
dc.identifier.urihttps://doi.org/10.12693/aphyspola.128.383
dc.identifier.urihttps://hdl.handle.net/20.500.12402/2212
dc.identifier.volume128en_US
dc.identifier.wosqualityQ4en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherPolska Akademia Nauken_US
dc.relation.isversionof10.12693/aphyspola.128.383en_US
dc.relation.journalActa Physica Polonica Aen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.rightsAttribution-ShareAlike 3.0 United States*
dc.rights.urihttp://creativecommons.org/licenses/by-sa/3.0/us/*
dc.subjectBiomoleculesen_US
dc.subjectCapacitanceen_US
dc.subjectDiodesen_US
dc.subjectElectronic Propertiesen_US
dc.subjectInterface Statesen_US
dc.subjectSemiconducting Indium Phosphideen_US
dc.subjectSemiconductor Diodesen_US
dc.titleElectronic properties of Cu/n-InP metal-semiconductor structures with cytosine biopolymeren_US
dc.typeArticleen_US

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