Photoelectric and photocapacitance characteristics of Au/pyrene/N-Si MIS structures

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dc.authorid0000-0002-3785-6190en_US
dc.contributor.authorGüllü, Ömer
dc.contributor.authorPakma, Osman
dc.contributor.authorÖzaydın, Cihat
dc.contributor.authorArsel, İsmail
dc.contributor.authorTurmuş, Mesut
dc.date.accessioned2021-04-14T06:35:00Z
dc.date.available2021-04-14T06:35:00Z
dc.date.issued2017-04-01en_US
dc.departmentBatman Üniversitesi Fen - Edebiyat Fakültesi Fizik Bölümüen_US
dc.departmentBatman Üniversitesi Mühendislik - Mimarlık Fakültesi Bilgisayar Mühendisliği Bölümü
dc.description.abstractThis paper presents in-depth analysis of the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of identically prepared Au/Pyrene(C16H10)/n-Si hybrid organic-oninorganic semiconductor photovoltaic cells (total 43 diodes). The barrier heights, ideality factors and reverse bias saturation currents of all devices were extracted from the electrical characteristics. The mean barrier height, mean ideality factor and mean saturation current from I-V measurements were calculated as 0.79 ± 0.01 eV, 1.40 ± 0.08 and (1.01 ± 0.46)x10-8 A, respectively. Also, the photoelectric (I-V) and photocapacitance (C-V and conductance (G)-voltage (V)) characteristics of the Au/Pyrene/n-Si device under 100 mW/cm2 light illumination were investigated. It has been seen that the light illumination increases strongly the current, capacitance and conductance values of the device due to electron-hole charge pair generation. The C-V and G-V characteristics under illumination have shown a non-monotonic dependence of capacitance on frequency giving rise to a peak. This is attributed to the existence of electrically active traps. The open circuit voltage and short circuit current of the Au/Pyrene/n-Si device were extracted as 80 mV and 30 µA, respectively.en_US
dc.identifier.citationGüllü, Ö., Pakma, O., Özaydın, C., Arsel, İ., Turmuş, M. (2017). Photoelectric and photocapacitance characteristics of Au/pyrene/N-Si MIS structures. Journal of Non-Oxide Glasses 9(2). pp. 33-46.en_US
dc.identifier.endpage46en_US
dc.identifier.issn2065-6874
dc.identifier.issue2en_US
dc.identifier.startpage33en_US
dc.identifier.urihttps://hdl.handle.net/20.500.12402/2867
dc.identifier.volume9en_US
dc.identifier.wosqualityN/Aen_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.language.isoenen_US
dc.publisherJournal of Non-Oxide Glassesen_US
dc.relation.journalJournal of Non-Oxide Glassesen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.rightsAttribution-NonCommercial-ShareAlike 3.0 United States*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/3.0/us/*
dc.subjectSchottky Barrieren_US
dc.subjectİdeality Factoren_US
dc.subjectOrganic-Inorganic Contacten_US
dc.subjectHybrid Photovoltaic Cellen_US
dc.subjectPyreneen_US
dc.titlePhotoelectric and photocapacitance characteristics of Au/pyrene/N-Si MIS structuresen_US
dc.typeArticleen_US

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