Electrical analysis of organic dye based MIS Schottky contacts
Yükleniyor...
Tarih
2010-05-25
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Microelectronic Engineering
Erişim Hakkı
info:eu-repo/semantics/restrictedAccess
Attribution-NonCommercial-ShareAlike 3.0 United States
Attribution-NonCommercial-ShareAlike 3.0 United States
Özet
In this work, we prepared metal/interlayer/semiconductor (MIS) diodes by coating of an organic film onp-Si substrate. Metal(Al)/interlayer(Orange G@OG)/semiconductor(p-Si) MIS structure had a good recti-fying behavior. By using the forward-biasI–Vcharacteristics, the values of ideality factor (n) and barrierheight (BH) for the Al/OG/p-Si MIS diode were obtained as 1.73 and 0.77 eV, respectively. It was seen thatthe BH value of 0.77 eV calculated for the Al/OG/p-Si MIS diode was significantly larger than the value of0.50 eV of conventional Al/p-Si Schottky diodes. Modification of the potential barrier of Al/p-Si diode wasachieved by using thin interlayer of the OG organic material. This was attributed to the fact that the OGorganic interlayer increased the effective barrier height by influencing the space charge region of Si. Theinterface-state density of the MIS diode was found to vary from 2.79x1013to 5.80x1012eVx1cmx2.
Açıklama
Anahtar Kelimeler
Schottky Diode, Interface States, Series Resistance, Organic Thin Film
Kaynak
WoS Q Değeri
N/A
Scopus Q Değeri
N/A
Cilt
87
Sayı
12
Künye
Güllü, Ö., Turut, A. (2010). Electrical analysis of organic dye based MIS Schottky contacts. Microelectronic Engineering, 87(12), pp.2482-2487.https://dx.doi.org/10.1016/j.mee.2010.05.004
