I V and C V F characteristics of aniline green N type silicon diode

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dc.authorid0000-0002-3785-6190en_US
dc.authorid0000-0001-6690-0122en_US
dc.authorid0000-0002-3098-0973en_US
dc.contributor.authorÖzkan, Samet
dc.contributor.authorGüllü, Ömer
dc.contributor.authorArsel, İsmail
dc.contributor.authorÖzaydın, Cihat
dc.contributor.authorPakma, Osman
dc.contributor.authorTurut, Abdülmecit
dc.date.accessioned2021-04-16T09:16:00Z
dc.date.available2021-04-16T09:16:00Z
dc.date.issued2015en_US
dc.departmentBatman Üniversitesi Fen - Edebiyat Fakültesi Fizik Bölümüen_US
dc.departmentBatman Üniversitesi Mühendislik - Mimarlık Fakültesi Bilgisayar Mühendisliği Bölümüen_US
dc.description.abstractWe have studied the I-V, C-V and C-f characteristics of the Aniline Green (AG)/n-type Si structure. In organic/inorganic semiconductor contact applications, in order to keep the technological difficulties and unknowns to a minimum, silicon is generally chosen as the substrate semiconducting material. In this structure, deposition of organic materials on the inorganic semiconductor can generate large number of interface states at the semiconductor surface that strongly influence the electrical properties of the AG/n-Si structure. The values of the ideality factor, series resistance and barrier height obtained from two methods were compared, and it was seen that there was an agreement with each other. The downward concave curvature of the forward bias current-voltage characteristics at sufficiently large voltages is caused by the presence of the effect of series resistance. Thus, the concavity of the forward bias current-voltage characteristics increases with the increasing series resistance value. The high resistance values have given the high ideality factors. Also, the higher values of capacitance at low frequencies were attributed to the excess capacitance resulting from the interface states in equilibrium with the nSi that can follow the ac signal.en_US
dc.identifier.citationÖzkan, S., Güllü, Ö., Arsel, İ., Özaydın, C., Pakma, O., Turut, A. (2015). I V and C V F characteristics of aniline green N type silicon diode. 9th International Physics Conference of the Balkan Physical Union, 24-27 August 2015, İstanbul.en_US
dc.identifier.urihttps://hdl.handle.net/20.500.12402/2913
dc.language.isoenen_US
dc.publisherİstanbul Universityen_US
dc.relation.journal9th International Physics Conference of the Balkan Physical Union, 24-27 August 2015en_US
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.titleI V and C V F characteristics of aniline green N type silicon diodeen_US
dc.typeConference Objecten_US

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Fen - Edebiyat Fakültesi, Fizik Bölümü, Bildiri Metinleri Koleksiyonu
Mühendislik-Mimarlık Fakültesi Bilgisayar Mühendisliği Bölümü Bildiri Metinleri Koleksiyonu