Electronic properties of the Al/Orange G/n-Si junction

Basit Öğe Kaydı
dc.authorid0000-0002-3785-6190en_US
dc.contributor.authorGüllü, Ömer
dc.contributor.authorArsel, İsmail
dc.date.accessioned2021-04-19T09:33:32Z
dc.date.available2021-04-19T09:33:32Z
dc.date.issued2017-04en_US
dc.departmentBatman Üniversitesi Fen - Edebiyat Fakültesi Fizik Bölümüen_US
dc.description.abstracten_US
dc.identifier.citationGüllü, Ö., Arsel, İ. (2017). Electronic properties of the Al/Orange G/n-Si junction. 2nd International Conference On Advances in Natural And Applied Sciences, 18-21 Nisan 2017, Antalyaen_US
dc.identifier.urihttps://hdl.handle.net/20.500.12402/2930
dc.language.isoenen_US
dc.relation.journal2nd International Conference On Advances in Natural And Applied Sciences, 18-21 Nisan 2017en_US
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.rightsAttribution-NonCommercial-ShareAlike 3.0 United States*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/3.0/us/*
dc.titleElectronic properties of the Al/Orange G/n-Si junctionen_US
dc.typeConference Objecten_US

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Fen - Edebiyat Fakültesi, Fizik Bölümü, Bildiri Metinleri Koleksiyonu