On the energy distribution profile of interface states obtained by taking into account of series resistance in Al/TiO2/p–Si (MIS) structures

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dc.authorid0000-0002-3098-0973en_US
dc.contributor.authorPakma, Osman
dc.contributor.authorSerin, Necmi
dc.contributor.authorSerin, Saliha Tülay
dc.contributor.authorAltındal, Şemsettin
dc.date.accessioned2021-04-15T07:57:56Z
dc.date.available2021-04-15T07:57:56Z
dc.date.issued2011-02-15en_US
dc.departmentBatman Üniversitesi Fen - Edebiyat Fakültesi Fizik Bölümüen_US
dc.description.abstractThe energy distribution profile of the interface states (Nss) of Al/TiO2/pSi (MIS) structures prepared using the solgel method was obtained from the forward bias currentvoltage (IV) characteristics by taking into account both the bias dependence of the effective barrier height (φe) and series resistance (Rs) at room temperature. The main electrical parameters of the MIS structure such as ideality factor (n), zero-bias barrier height (φb0) and average series resistance values were found to be 1.69, 0.519 eV and 659 Ω, respectively. This high value of n was attributed to the presence of an interfacial insulator layer at the Al/pSi interface and the density of interface states (Nss) localized at the Si/TiO2 interface. The values of Nss localized at the Si/TiO2 interface were found with and without the Rs at 0.25-Ev in the range between 8.4×10 13 and 4.9×1013 eV-1 cm-2. In addition, the frequency dependence of capacitancevoltage (CV) and conductancevoltage (G/ω-V) characteristics of the structures have been investigated by taking into account the effect of Nss and R s at room temperature. It can be found out that the measured C and G/ω are strongly dependent on bias voltage and frequency.en_US
dc.identifier.citationPakma, O., Serin, N., Serin, S. T., Altındal, Ş. (2011). On the energy distribution profile of interface states obtained by taking into account of series resistance in Al/TiO2/p–Si (MIS) structures. Physica B: Condensed Matter, 406 (4), pp. 771-776. https://doi.org/10.1016/j.physb.2010.11.078en_US
dc.identifier.endpage776en_US
dc.identifier.issn0921-4526
dc.identifier.issue4en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage771en_US
dc.identifier.urihttps://doi.org/10.1016/j.physb.2010.11.078
dc.identifier.urihttps://hdl.handle.net/20.500.12402/2887
dc.identifier.volume406en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.isversionof10.1016/j.physb.2010.11.078en_US
dc.relation.journalPhysica B: Condensed Matteren_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/embargoedAccessen_US
dc.rightsAttribution-NonCommercial-ShareAlike 3.0 United States*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/3.0/us/*
dc.subjectThin Filmsen_US
dc.subjectSol–Gel Growthen_US
dc.subjectElectrical Propertiesen_US
dc.subjectSurface Propertiesen_US
dc.titleOn the energy distribution profile of interface states obtained by taking into account of series resistance in Al/TiO2/p–Si (MIS) structuresen_US
dc.typeArticleen_US

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