Electronic properties of Al/DNA/p-Si MIS diode: Application as temperature sensor

Basit Öğe Kaydı
dc.authorid0000-0002-3785-6190en_US
dc.contributor.authorGüllü, Ömer
dc.contributor.authorTürüt, Abdülmecit
dc.date.accessioned2019-07-05T13:17:06Z
dc.date.available2019-07-05T13:17:06Z
dc.date.issued2011-01en_US
dc.departmentBatman Üniversitesi Fen - Edebiyat Fakültesi Fizik Bölümüen_US
dc.description.abstractThe current-voltage (I-V) measurements were performed in the temperature range (200-300 K) on Al/DNA/p-Si Schottky barrier type diodes. The Schottky diode shows non-ideal I-V behaviour with ideality factors n equal to 1.34 ± 0.02 and 1.70 ± 0.02 at 300 K and 200 K, respectively, and is thought to have a metal-interface layer-semiconductor (MIS) configuration. The zero-bias barrier height Φb determined from the I-V measurements was 0.75 ± 0.01 eV at 300 K and decreases to 0.61 ± 0.01 eV at 200 K. The forward voltage-temperature (VF-T) characteristics were obtained from the I-V measurements in the temperature range 200-300 K at different activation currents (IF) in the range 20 nA-6 μA. The VF-T characteristics were linear for three activation currents in the diode. From the VF-T characteristics at 20 nA, 100 nA and 6 μA, the values of the temperature coefficients of the forward bias voltage (dV F/dT) for the diode were determined as -2.30 mV K-1, -2.60 mV K-1 and -3.26 mV K-1 with a standard error of 0.05 mV K-1, respectively.en_US
dc.identifier.citationGüllü, Ö, Türüt, A. (2011). Electronic properties of Al/DNA/p-Si MIS diode: Application as temperature sensor. Journal of Alloys and Compounds, 509(3), pp. 571-577. https://doi.org/10.1016/j.jallcom.2010.09.146en_US
dc.identifier.endpage577en_US
dc.identifier.issn0925-8388
dc.identifier.issue3en_US
dc.identifier.scopusqualityQ1en_US
dc.identifier.startpage571en_US
dc.identifier.urihttps://doi.org/10.1016/j.jallcom.2010.09.146
dc.identifier.urihttps://hdl.handle.net/20.500.12402/2218
dc.identifier.volume509en_US
dc.identifier.wosqualityQ1en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.isversionof10.1016/j.jallcom.2010.09.146en_US
dc.relation.journalJournal of Alloys and Compoundsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.rightsAttribution-NonCommercial-ShareAlike 3.0 United States*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/3.0/us/*
dc.subjectBarrier Heightsen_US
dc.subjectDNAen_US
dc.subjectIdeality Factoren_US
dc.subjectMetal-Semiconductor Structuresen_US
dc.subjectSiliconen_US
dc.titleElectronic properties of Al/DNA/p-Si MIS diode: Application as temperature sensoren_US
dc.typeArticleen_US

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