Electrical characteristics of Co/n-Si schottky barrier diodes using I – V and C – V measurements electrical characteristics of Co/n-Si schottky barrier diodes using I – V and C – V measurements
| dc.authorid | 0000-0002-3785-6190 | en_US |
| dc.contributor.author | Güllü, Ömer | |
| dc.contributor.author | Güler, Gülşen | |
| dc.contributor.author | Karataş, Şükrü | |
| dc.contributor.author | Bakkaloğlu, Ömer Faruk | |
| dc.date.accessioned | 2021-04-15T07:50:19Z | |
| dc.date.available | 2021-04-15T07:50:19Z | |
| dc.date.issued | 2009-06 | en_US |
| dc.department | Batman Üniversitesi Fen - Edebiyat Fakültesi Fizik Bölümü | en_US |
| dc.description.abstract | Electrical characteristics of Co/n-Si Schottky barrier diodes are analysed by current-voltage (I – V) and capacitance-voltage (C – V) techniques at room temperature. The electronic parameters such as ideality factor, barrier height and average series resistance are determined. The barrier height 0.76eV obtained from the C – V measurements is higher than that of the value 0.70eV obtained from the I – V measurements. The series resistance RS and the ideality factor n are determined from the d ln(I)/dV plot and are found to be 193.62Ω, and 1.34, respectively. The barrier height and the RS value are calculated from the H(I) – I plot and are found to be 0.71 eV and 205.95Ω. Furthermore, the energy distribution of the interface state density is determined from the forward bias I – V characteristics by taking into account the bias dependence of the effective barrier height. The interface state density Nss ranges from 6.484 × 1011 cm−2eV−1 in (EC – 0.446) eV to 2.801 × 1010 cm−2eV−1 in (EC – 0.631) eV, of the Co/n-Si Schottky barrier diode. The results show the presence of a thin interfacial layer between the metal and the semiconductor. | en_US |
| dc.identifier.citation | Güllü, Ö., Güler, G., Karataş, Ş., Bakkaloğlu, Ö.F. (2009). Electrical characteristics of Co/n-Si schottky barrier diodes using I – V and C – V measurements electrical characteristics of Co/n-Si schottky barrier diodes using I – V and C – V measurements. Chinese Physics Letters, 26(6). | en_US |
| dc.identifier.issue | 6 | en_US |
| dc.identifier.scopusquality | N/A | en_US |
| dc.identifier.uri | https://iopscience.iop.org/article/10.1088/0256-307X/26/6/067301/pdf | |
| dc.identifier.uri | https://hdl.handle.net/20.500.12402/2886 | |
| dc.identifier.volume | 26 | en_US |
| dc.identifier.wosquality | N/A | en_US |
| dc.indekslendigikaynak | Web of Science | en_US |
| dc.indekslendigikaynak | Scopus | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Chinese Physics Letters | en_US |
| dc.relation.isversionof | 10.1088/0256-307X/26/6/067301 | en_US |
| dc.relation.journal | Chinese Physics Letters | en_US |
| dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
| dc.rights | info:eu-repo/semantics/openAccess | en_US |
| dc.rights | Attribution-NonCommercial-ShareAlike 3.0 United States | * |
| dc.rights.uri | http://creativecommons.org/licenses/by-nc-sa/3.0/us/ | * |
| dc.subject | Schottky Barrier | en_US |
| dc.title | Electrical characteristics of Co/n-Si schottky barrier diodes using I – V and C – V measurements electrical characteristics of Co/n-Si schottky barrier diodes using I – V and C – V measurements | en_US |
| dc.type | Article | en_US |
