Electrical properties of safranine T p Si organic inorganic semiconductor devices

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dc.authorid0000-0002-3785-6190en_US
dc.contributor.authorGüllü, Ömer
dc.contributor.authorAsubay, Sezai
dc.contributor.authorBiber, Mehmet
dc.contributor.authorKılıçoğlu, Tahsin
dc.contributor.authorTurut, Abdulmecit
dc.date.accessioned2021-04-14T07:26:25Z
dc.date.available2021-04-14T07:26:25Z
dc.date.issued2010-04-25en_US
dc.departmentBatman Üniversitesi Fen - Edebiyat Fakültesi Fizik Bölümüen_US
dc.description.abstractWe investigated the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of identically prepared safranine T/p-Si organic/inorganic Schottky devices (total 26 diodes) formed by evaporation of organic compound solution on p-Si semiconductor substrate. It was seen that the safranine T organic thin film on the p-Si substrate showed a good rectifying behavior. The barrier heights and ideality factors of all devices were extracted from the electrical characteristics. The mean barrier height and mean ideality factor from I-V measurements were calculated as 0.59±0.02 eV and 1.80±0.20, respectively. Also, the mean barrier height and mean acceptor doping concentration from C-V measurements were calculated as 0.67±0.10 eV and (6.96±0.37)×1014 cm-3, respectively. The discrepancy in the barrier height values obtained from I-V and C-V characteristics has been attributed to different nature of the measurements. The discrepancy between these values can also be due to the existence of the interfacial native oxide and the organic safranine T thin layer between the semiconductor substrate and top contact metal.en_US
dc.identifier.citationGüllü, Ö., Asubay, S., Biber, M., Kılıçoğlu, T., Turut, A. (2010). Electrical properties of safranine T p Si organic inorganic semiconductor devices. The European Physical Journal Applied Physics 50(1). https://doi.org/10.1051/epjap/2010022en_US
dc.identifier.issn1286-0042
dc.identifier.issue1en_US
dc.identifier.scopusqualityQ3en_US
dc.identifier.urihttps://doi.org/10.1051/epjap/2010022
dc.identifier.urihttps://hdl.handle.net/20.500.12402/2868
dc.identifier.volume50en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherCambridge Universityen_US
dc.relation.isversionof10.1051/epjap/2010022en_US
dc.relation.journalThe European Physical Journal Applied Physicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/restrictedAccessen_US
dc.rightsAttribution-NonCommercial-ShareAlike 3.0 United States*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/3.0/us/*
dc.titleElectrical properties of safranine T p Si organic inorganic semiconductor devicesen_US
dc.typeArticleen_US

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Fen - Edebiyat Fakültesi, Fizik Bölümü, Makale Koleksiyonu
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