The analysis of lateral distribution of barrier height in identically prepared Co/n-Si Schottky diodes

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dc.authorid0000-0002-3785-6190en_US
dc.contributor.authorGüllü, Ömer
dc.contributor.authorKarataş, Şükrü
dc.contributor.authorGüler, Gülşen
dc.contributor.authorBakkaloğlu, Ömer Faruk
dc.date.accessioned2021-04-15T08:24:06Z
dc.date.available2021-04-15T08:24:06Z
dc.date.issued2009-11-03en_US
dc.departmentBatman Üniversitesi Fen - Edebiyat Fakültesi Fizik Bölümüen_US
dc.description.abstractWe have studied the experimental linear relationship between ideality factors and barrier heights (BHs) for Co/n-Si metal–semiconductor (MS) structures with a doping density of about 1015 cm−3. The barrier heights for the Co/n-type Si metal–semiconductor structures from the current–voltage (I–V) characteristics varied from 0.64 to 0.70 eV, the ideality factor n varied from 1.18 to 1.26, and from reverse bias capacitance–voltage (C−2–V) characteristics the barrier height varied from 0.68 to 0.81 eV. The experimental barrier height distributions obtained from the I–V and C−2–V characteristics were fitted by a Gaussian distribution function, and their mean values were found to be 0.67 and 0.75 eV, respectively. Furthermore, the lateral homogeneous BH value of approximately 0.81 eV for Co/n-Si metal–semiconductor structures was obtained from the linear relationship between experimental effective BHs and ideality factors.en_US
dc.identifier.citationGüllü, Ö., Karataş, Ş., Güler, G., Bakkaloğlu, Ö.F. (2009). The analysis of lateral distribution of barrier height in identically prepared Co/n-Si Schottky diodes. Journal of Alloys and Compounds. 486(1-2), pp.343-347. https://dx.doi.org/10.1016/j.jallcom.2009.06.163en_US
dc.identifier.endpage347en_US
dc.identifier.issn09258388
dc.identifier.issue1-2en_US
dc.identifier.scopusqualityN/Aen_US
dc.identifier.startpage343en_US
dc.identifier.urihttps://dx.doi.org/10.1016/j.jallcom.2009.06.163
dc.identifier.urihttps://hdl.handle.net/20.500.12402/2889
dc.identifier.volume486en_US
dc.identifier.wosqualityN/Aen_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.isversionof10.1016/j.jallcom.2009.06.163en_US
dc.relation.journalJournal of Alloys and Compoundsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/restrictedAccessen_US
dc.subjectSiliconen_US
dc.subjectMetal–Semiconductor Structuresen_US
dc.subjectBarrier Heighten_US
dc.subjectIdeality Factoren_US
dc.subjectInhomogeneityen_US
dc.titleThe analysis of lateral distribution of barrier height in identically prepared Co/n-Si Schottky diodesen_US
dc.typeArticleen_US

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