Determination of the laterally homogeneous barrier height of thermally annealed and unannealed Au/p-InP/Zn-Au Schottky barrier diodes

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dc.authorid0000-0002-3785-6190en_US
dc.contributor.authorGüllü, Ömer
dc.contributor.authorTurut, Abdulmecit
dc.contributor.authorAsubay, Sezai
dc.date.accessioned2021-04-15T09:10:51Z
dc.date.available2021-04-15T09:10:51Z
dc.date.issued2008-03-25en_US
dc.departmentBatman Üniversitesi Fen - Edebiyat Fakültesi Fizik Bölümüen_US
dc.description.abstractWe have identically prepared Au/p-InP Schottky barrier diodes (SBDs). The diodes were annealed up to 400 °C thermally. The barrier height (BH) for the as-deposited Au/p-InP/Zn-Au SBDs from the current–voltage characteristics have varied from 0.58 to 0.72 eV, and ideality factor n from 1.14 to 1.47. The BH for the annealed SBDs from the current–voltage characteristics have varied from 0.76 to 0.82 eV, and ideality factor n from 1.17 to 1.39. As a result of the thermal annealing, it has been seen that the BH values of the annealed SBDs are larger than those of the as-deposited SBDs. We have determined a lateral homogeneous BH value of 0.72 eV for the as-deposited Au/p-InP SBD from the experimental linear relationship between barrier heights and ideality factors, and a value of 0.85 eV for the annealed Au/p-InP SBD. The increase of 0.13 eV in the BH value by means of 400 °C annealing has been ascribed to the formation of the excess charges that electrically actives on the semiconductor surface.en_US
dc.identifier.citationGüllü, Ö., Turut, A., Asubay, S. (2008). Determination of the laterally homogeneous barrier height of thermally annealed and unannealed Au/p-InP/Zn-Au Schottky barrier diodes. Applied Surface Science, 254(11), pp.3558-3561. https://dx.doi.org/10.1016/j.apsusc.2007.11.050en_US
dc.identifier.endpage3561en_US
dc.identifier.issue11en_US
dc.identifier.scopusqualityN/Aen_US
dc.identifier.startpage3558en_US
dc.identifier.urihttps://dx.doi.org/10.1016/j.apsusc.2007.11.050
dc.identifier.urihttps://hdl.handle.net/20.500.12402/2893
dc.identifier.volume254en_US
dc.identifier.wosqualityN/Aen_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.isversionof10.1016/j.apsusc.2007.11.050en_US
dc.relation.journalApplied Surface Scienceen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/restrictedAccessen_US
dc.subjectInP Semiconductoren_US
dc.subjectSchottky Barrier Heighten_US
dc.subjectMetal–Semiconductor-Metalcontactsen_US
dc.subjectBarrier İnhomogeneityen_US
dc.titleDetermination of the laterally homogeneous barrier height of thermally annealed and unannealed Au/p-InP/Zn-Au Schottky barrier diodesen_US
dc.typeArticleen_US

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