Electrical analysis of organic interlayer based metal/interlayer/semiconductor diode structures
| dc.authorid | 0000-0002-3785-6190 | en_US |
| dc.contributor.author | Güllü, Ömer | |
| dc.contributor.author | Turut, Abdulmecit | |
| dc.date.accessioned | 2021-04-14T13:06:11Z | |
| dc.date.available | 2021-04-14T13:06:11Z | |
| dc.date.issued | 2009-01 | en_US |
| dc.department | Batman Üniversitesi Fen - Edebiyat Fakültesi Fizik Bölümü | en_US |
| dc.description.abstract | In this work, metal/interlayer/semiconductor (MIS) diodes formed by coating of an organic film to p-Si semiconductor substrate were prepared. Metal(Al)/interlayer (phenolsulfonphthalein=PSP)/semiconductor(p-Si) MIS device had a good rectifying behavior. By using the forward bias I-V characteristics, the values of ideality factor (n) and barrier height (Phi(b)) for the Al/PSP/p-Si MIS diode were obtained as 1.45 and 0.81 eV, respectively. It was seen that the Phi(b) value of 0.81 eV calculated for the Al/PSP/p-Si MIS diode was significantly larger than value of 0.50 eV of conventional Al/p-Si Schottky diodes. Modification of the interfacial potential barrier of Al/p-Si diode was achieved by using a thin interlayer of the PSP organic material. This has been attributed to the fact that the PSP organic interlayer increases the effective barrier height by influencing the space-charge region of Si. The interface-state density of the MIS diode was determined, and the interface-state density was found to vary from 3.00 x 10(13) to 2.99 x 10(12) eV(-1) cm(-2). (C) 2009 American Institute of Physics. | en_US |
| dc.identifier.citation | Güllü, Ö., Turut, A. (2009). Electrical analysis of organic interlayer based metal/interlayer/semiconductor diode structures. Journal of Applied Physics. 106(10). https://doi.org/10.1063/1.3261835 | en_US |
| dc.identifier.issue | 10 | en_US |
| dc.identifier.scopusquality | N/A | en_US |
| dc.identifier.uri | https://doi.org/10.1063/1.3261835 | |
| dc.identifier.uri | https://hdl.handle.net/20.500.12402/2882 | |
| dc.identifier.volume | 106 | en_US |
| dc.identifier.wosquality | N/A | en_US |
| dc.indekslendigikaynak | Web of Science | en_US |
| dc.indekslendigikaynak | Scopus | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Journal of Applied Physics | en_US |
| dc.relation.isversionof | 10.1063/1.3261835 | en_US |
| dc.relation.journal | Journal of Applied Physics | en_US |
| dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
| dc.rights | info:eu-repo/semantics/openAccess | en_US |
| dc.rights | Attribution-NonCommercial-ShareAlike 3.0 United States | * |
| dc.rights.uri | http://creativecommons.org/licenses/by-nc-sa/3.0/us/ | * |
| dc.title | Electrical analysis of organic interlayer based metal/interlayer/semiconductor diode structures | en_US |
| dc.type | Article | en_US |
