Current transport mechanism of Cu In1 x Gax S1 y sey 2 based heterojunction solar cells

dc.authorid0000-0002-3098-0973en_US
dc.contributor.authorPakma, Osman
dc.contributor.authorEriş, Ferhat
dc.date.accessioned2021-04-16T08:19:44Z
dc.date.available2021-04-16T08:19:44Z
dc.date.issued2015en_US
dc.departmentBatman Üniversitesi Fen - Edebiyat Fakültesi Fizik Bölümüen_US
dc.description.abstractIn this study; temperature-dependent current-voltage measurements are used to determine the dominant currenttransport mechanism of ZnO/CdS/Cu(In,Ga)(S,Se)2 heterojunction solar cells. The dominant current-transport mechanism is mainly driven by changes in the Cu and S-stoichiometry. Whereas Cu and S rich devices are dominated by recombination at the CdS/absorber interface, bulk recombination in Cu and S poor devices irrespective of the band gab energy of the absorber.en_US
dc.identifier.citationPakma, O., Eriş, F. (2015). Current transport mechanism of Cu In1 x Gax S1 y sey 2 based heterojunction solar cells. 9th International Physics Conference of the Balkan Physical Union, 24-27 August 2015, İstanbul.en_US
dc.identifier.urihttps://hdl.handle.net/20.500.12402/2910
dc.language.isoenen_US
dc.publisherİstanbul Universityen_US
dc.relation.journal9th International Physics Conference of the Balkan Physical Union, 24-27 August 2015en_US
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.titleCurrent transport mechanism of Cu In1 x Gax S1 y sey 2 based heterojunction solar cellsen_US
dc.typeConference Objecten_US

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