Current mechanism in HfO 2-gated metal-oxide-semiconductor devices
Yükleniyor...
Dosyalar
Tarih
2012-06-19
Yazarlar
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Cilt Başlığı
Yayıncı
Hindawi
Erişim Hakkı
info:eu-repo/semantics/openAccess
Attribution-NonCommercial-ShareAlike 3.0 United States
Attribution-NonCommercial-ShareAlike 3.0 United States
Özet
The present study aimed to examine the current density-voltage (J-V) characteristics of Al/HfO2/p-Si (MOS) structure at
temperatures ranging between 100 and 320 K and to determine the structure’s current transport mechanism. The HfO2 film was
coated on a single side of the p-Si (111) crystal using the spin coating method. The J-V measurements of the obtained structure
at the temperatures between 100 and 320 K revealed that the current transport mechanism in the structure was compatible with
the Schottky emission theory. The Schottky emission theory was also used to calculate the structure’s Schottky barrier heights
(φB), dielectric constants (εr) and refractive index values of the thin films at each temperature value. The dielectric constant and
refractive index values were observed to decrease at decreasing temperatures. The capacitance-voltage (C-V) and conductancevoltage (G/ω-V) characteristics of Al/HfO2/p-Si (MOS) structure was measured in the temperature range of 100–320 K. The
values of measured C and G/ω decrease in accumulation and depletion regions with decreasing temperature due to localized
Nss at Si/HfO2 interface.
Açıklama
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Künye
Pakma, O. (2012). Current mechanism in HfO 2-gated metal-oxide-semiconductor devices. International Journal of Photoenergy.https://doi.org/10.1155/2012/858350
