The theoretical and experimental study on double-Gaussian distribution in inhomogeneous barrier-height Schottky contacts

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dc.authorid0000-0002-1864-2269en_US
dc.authorid0000-0002-4664-4528en_US
dc.authorid0000-0002-8148-7935en_US
dc.contributor.authorYıldırım, Nezir
dc.contributor.authorTurut, Abdulmecit
dc.contributor.authorTurut, Veyis
dc.date.accessioned2021-04-20T11:14:55Z
dc.date.available2021-04-20T11:14:55Z
dc.date.issued2010-11en_US
dc.departmentBatman Üniversitesi Fen - Edebiyat Fakültesi Matematik Bölümüen_US
dc.description.abstractWe have considered multi-Gaussian distribution of barrier-heights for non-interactive barrier inhomogeneities in the inhomogeneous Schottky diodes, and we have shown the presence of the intersecting behavior in the forward-bias current-voltage (I-V) curves for the double-Gaussian distribution model at low temperatures. We have tried to eliminate this effect by generating I-V curves at lower temperatures with the bias-dependent barrier-height expression which leads to the ideality factors greater than unity. For this calculation, we have obtained the expressions for the barrier-height change and ideality factor, and for bias-dependency of the BH for the multi-Gaussian model by following the literature. We have shown that the experimental forward-bias I-V curves coincide with the theoretical ones using the bias-dependent inhomogeneous BH expression at low and high temperatures in the double-Gaussian distribution of BHs.en_US
dc.identifier.citationYıldırım, N., Turut, A., Turut, V. (2010). The theoretical and experimental study on double-Gaussian distribution in inhomogeneous barrier-height Schottky contacts. Microelectronic Engineering, 87 (11), pp. 2225-2229. https://doi.org/10.1016/j.mee.2010.02.007en_US
dc.identifier.endpage2229en_US
dc.identifier.issn0167-9317
dc.identifier.issue11en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage2225en_US
dc.identifier.urihttps://doi.org/10.1016/j.mee.2010.02.007
dc.identifier.urihttps://hdl.handle.net/20.500.12402/2953
dc.identifier.volume87en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.isversionof10.1016/j.mee.2010.02.007en_US
dc.relation.journalMicroelectronic Engineeringen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/embargoedAccessen_US
dc.rightsAttribution-NonCommercial-ShareAlike 3.0 United States*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/3.0/us/*
dc.subjectBarrier Inhomogeneityen_US
dc.subjectDouble-Gaussian Distributionen_US
dc.subjectSchottky Barrier Diodeen_US
dc.titleThe theoretical and experimental study on double-Gaussian distribution in inhomogeneous barrier-height Schottky contactsen_US
dc.typeArticleen_US

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