I-V-T analysing an inhomogeneous Au/Poly(4-vinyl phenol)/p-Si structure with a double gaussian distribution of barrier heights

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dc.authorid0000-0002-3098-0973en_US
dc.authorid0000-0003-4192-5512en_US
dc.authorid0000-0001-7249-2700en_US
dc.authorid0000-0001-6758-5574en_US
dc.authorid0000-0003-0716-9194en_US
dc.contributor.authorPakma, Osman
dc.contributor.authorTozlu, Cem
dc.contributor.authorKavasoğlu, Neşe
dc.contributor.authorKavasoğlu, Abdülkadir Sertap
dc.contributor.authorÖzden, Şadan
dc.date.accessioned2021-04-15T08:23:20Z
dc.date.available2021-04-15T08:23:20Z
dc.date.issued2010-12-29en_US
dc.departmentBatman Üniversitesi Fen - Edebiyat Fakültesi Fizik Bölümüen_US
dc.description.abstractIn this study, the current-voltage (I-V) characteristics of Au/Poly(4-vinyl phenol)/p-Si structures have been measured over a wide temperature range (100-300 K). These structures have been analyzed according to thermionic emission (TE) theory, as a result of which an abnormal decrease occurred in the zero-bias barrier height (φb0) and an increase in the ideality factor (n) was observed with temperature decrease and nonlinearity in the activation energy plot. By assuming a Gaussian distribution (GD) of barrier heights of the Au/Poly(4-vinyl phenol)/p-Si structures, barrier inhomogeneities are believed to responsible for this behavior. Evidence is given for the existence of a double GD with mean barrier heights (φ̄b0) of 1.042 and 0.623 eV, standard deviations of 0.138 and 0.081 V, and ideality factors 2.76 and 7.26, which remain effective in the temperature ranges of 180-300 and 100-160 K, respectively. As a result, without using the temperature coefficient of the barrier height, the modified ln(Io/T 2)-q2σo 2/2(kT)2 vs. q/kT plot gives φ̄b0 values and Richardson constants (A *) as 1.036 and 0.623 eV, and 36.20 and 19.99 A/cm2 K2, respectively. The effective Richardson constant value of 36.20 A/cm2 K2 is very similar to the theoretical value of 32 A/cm2K2 for p-Si. Consequently, the temperature dependence of the forward bias I-V characteristics of Au/Poly(4-vinyl phenol)//p-Si (MIS) structure could be attributed to the thermionic emission (TE) mechanism with double GD of the barrier heights.en_US
dc.identifier.citationPakma, O., Tozlu, C., Kavasoğlu, N., Kavasoğlu, A. S., Özden, Ş. (2010). I-V-T analysing an inhomogeneous Au/Poly(4-vinyl phenol)/p-Si structure with a double gaussian distribution of barrier heights. Journal of Sol-Gel Science and Technology, 58 (1), pp. 244-250. https://dx.doi.org/10.1007/s10971-010-2384-5en_US
dc.identifier.endpage250en_US
dc.identifier.issn0928-0707
dc.identifier.issn1573-4846
dc.identifier.issue1en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage244en_US
dc.identifier.urihttps://dx.doi.org/10.1007/s10971-010-2384-5
dc.identifier.urihttps://link.springer.com/content/pdf/10.1007/s10971-010-2384-5.pdf
dc.identifier.urihttps://hdl.handle.net/20.500.12402/2888
dc.identifier.volume58en_US
dc.identifier.wosqualityQ1en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherSpringer Natureen_US
dc.relation.isversionof10.1007/s10971-010-2384-5en_US
dc.relation.journalJournal of Sol-Gel Science and Technologyen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/embargoedAccessen_US
dc.rightsAttribution-NonCommercial-ShareAlike 3.0 United States*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/3.0/us/*
dc.subjectDouble Gaussianen_US
dc.subjectI-V-T Characteristicsen_US
dc.subjectMetal-Insulator-Semiconductoren_US
dc.subjectPoly(4-Vinyl Phenol)en_US
dc.subjectSpin Coatingen_US
dc.titleI-V-T analysing an inhomogeneous Au/Poly(4-vinyl phenol)/p-Si structure with a double gaussian distribution of barrier heightsen_US
dc.typeArticleen_US

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