Barrier modification by methyl violet organic dye molecules of Ag p InP structures
Yükleniyor...
Dosyalar
Tarih
2016-05
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
European Journal of Interdisciplinary Studies
Erişim Hakkı
info:eu-repo/semantics/openAccess
Attribution-NonCommercial-ShareAlike 3.0 United States
Attribution-NonCommercial-ShareAlike 3.0 United States
Özet
This work includes fabrication and electrical characterization of Metal/Interlayer/Semiconductor (MIS) structures
with methyl violet organic film on p-InP wafer. Metal(Ag)/ Interlayer (methyl violet =MV)/Semiconductor(p-InP)
MIS structure presents a rectifying contact behavior. The values of ideality factor (n) and barrier height (BH) for
the Ag/MV/p-InP MIS diode by using the current-voltage (I-V) measurement have been extracted as 1.21 and
0.84 eV, respectively. It was seen that the BH value of 0.84 eV calculated for the Ag/MV/p-InP MIS structure
was significantly higher than the value of 0.64 eV of Ag/p-InP control contact. This situation was ascribed to the
fact that the MV organic interlayer increased the effective barrier height by influencing the space charge region
of inorganic semiconductor. The values of diffusion potential and barrier height for the Ag/MV/p-InP MIS diode
by using the capacitance-voltage (C-V) measurement have been extracted as 1.21 V and 0.84 eV, respectively.
The interface-state density of the Ag/MV/p-InP structure was seen to change from 2.57×1013 eV-1cm-2
to
2.19×1012 eV-1cm-2
Açıklama
Anahtar Kelimeler
Organic Dye Film, MIS Diode, Series Resistance, Interface States
Kaynak
WoS Q Değeri
Scopus Q Değeri
Cilt
2
Sayı
3
Künye
Güllü, Ö. (2016). Barrier modification by methyl violet organic dye molecules of Ag p InP structures. European Journal of Interdisciplinary Studies, 2(3).
