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Öğe On the energy distribution profile of interface states obtained by taking into account of series resistance in Al/TiO2/p–Si (MIS) structures(Elsevier, 2011-02-15) Pakma, Osman; Serin, Necmi; Serin, Saliha Tülay; Altındal, ŞemsettinThe energy distribution profile of the interface states (Nss) of Al/TiO2/pSi (MIS) structures prepared using the solgel method was obtained from the forward bias currentvoltage (IV) characteristics by taking into account both the bias dependence of the effective barrier height (φe) and series resistance (Rs) at room temperature. The main electrical parameters of the MIS structure such as ideality factor (n), zero-bias barrier height (φb0) and average series resistance values were found to be 1.69, 0.519 eV and 659 Ω, respectively. This high value of n was attributed to the presence of an interfacial insulator layer at the Al/pSi interface and the density of interface states (Nss) localized at the Si/TiO2 interface. The values of Nss localized at the Si/TiO2 interface were found with and without the Rs at 0.25-Ev in the range between 8.4×10 13 and 4.9×1013 eV-1 cm-2. In addition, the frequency dependence of capacitancevoltage (CV) and conductancevoltage (G/ω-V) characteristics of the structures have been investigated by taking into account the effect of Nss and R s at room temperature. It can be found out that the measured C and G/ω are strongly dependent on bias voltage and frequency.Öğe The optical characterization of organometallic complex thin films by spectroscopic ellipsometry and photovoltaic diode application(Elsevier, 2016-05) Özaydın, Cihat; Güllü, Ömer; Pakma, Osman; İlhan, Salih; Akkılıç, KemalIn this work, organometallic complex (OMC) films have been deposited onto glass or silicon substrates by spin coating technique and their photovoltaic application potential has been investigated. Optical properties and thickness of the film have been investigated by spectroscopic ellipsometry (SE). Also, transmittance spectrum has been taken by UV/vis spectrophotometer. The optical method has been used to determine the band gap value of the films. Also, Au/OMC/n-Si metal/interlayer/semiconductor (MIS) diode has been fabricated. Current-voltage and photovoltaic properties of the structure were investigated. The ideality factor (n) and barrier height (Φb) values of the diode were found to be 2.89 and 0.79 eV, respectively. The device shows photovoltaic behavior with a maximum open-circuit voltage of 396 mV and a short circuit current of 33.8 μA under 300 W light.
