1 sonuçlar
Arama Sonuçları
Listeleniyor 1 - 1 / 1
Öğe Electronic properties of Cu/n-InP metal-semiconductor structures with cytosine biopolymer(Polska Akademia Nauk, 2015-09) Güllü, Ömer; Türüt, AbdülmecitThis work shows that cytosine biomolecules can control the electrical characteristics of conventional Cu/n-InP metal-semiconductor contacts. A new Cu/n-InP Schottky junction with cytosine interlayer has been formed by using a drop cast process. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of Cu/cytosine/n-InP structure were investigated at room temperature. A potential barrier height as high as 0.68 eV has been achieved for Cu/cytosine/n-InP Schottky diodes, which have good I-V characteristics. This good performance is attributed to the effect of interfacial biofilm between Cu and n-InP. By using C-V measurement of the Cu/cytosine/n-InP Schottky diode the diffusion potential and the barrier height have been calculated as a function of frequency. Also, the interface-state density of the Cu/cytosine/n-InP diode was found to vary from 2:24 × 1013 eV-1cm-2 to 5.56× 1012 eV-1 cm-2.
