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  • Öğe
    The characteristic diode parameters in Ti/p-InP contacts prepared by DC sputtering and evaporation processes over a wide measurement temperature
    (World Scientific, 2017-06) Ejderha, Kadir; Asubay, Sezai; Yıldırım, Nezir; Güllü, Ömer; Türüt, Abdülmecit; Abay, Bahattin
    The titanium/p-indium phosphide (Ti/p-InP) Schottky diodes (SDs) have been prepared by thermal evaporation and DC magnetron sputtering deposition. Then, their current-voltage (I-V) characteristics have been measured in the sample temperature range of 100-400K with steps of 20K. The characteristic parameters of both Ti/p-InP SDs have been compared with each other. The barrier height (BH) values of 0.824 and 0.847 at 300K have been obtained for the sputtered and the evaporated SDs, respectively. This low BH value for the sputtered SD has been attributed to some defects introduced by the sputtered deposition technique over a limited depth in to the p-type substrate. The BH of the evaporated and sputtered diodes has decreased with the standard deviations of 58 and 64mV obeying to double-Gaussian distribution (GD) in 220-400K range, respectively, and it has seen a more sharper reduction for the BHs with the standard deviations of 93 and 106 mV in 100-220K range. The Richardson constant values of 89.72 and 53.24A(Kcm)-2 (in 220-400K range) for the evaporated and sputtered samples, respectively, were calculated from the modified ln(I0/T2)-q2σs2/2k2T2 vs (kT)-1 curves by GD of the BHs. The value 53.24A(Kcm)-2 for the sputtered sample in high temperatures range is almost the same as the known Richardson constant value of 60A(Kcm)-2 for p-type InP.
  • Öğe
    The theoretical and experimental study on double-Gaussian distribution in inhomogeneous barrier-height Schottky contacts
    (Elsevier, 2010-11) Yıldırım, Nezir; Turut, Abdulmecit; Turut, Veyis
    We have considered multi-Gaussian distribution of barrier-heights for non-interactive barrier inhomogeneities in the inhomogeneous Schottky diodes, and we have shown the presence of the intersecting behavior in the forward-bias current-voltage (I-V) curves for the double-Gaussian distribution model at low temperatures. We have tried to eliminate this effect by generating I-V curves at lower temperatures with the bias-dependent barrier-height expression which leads to the ideality factors greater than unity. For this calculation, we have obtained the expressions for the barrier-height change and ideality factor, and for bias-dependency of the BH for the multi-Gaussian model by following the literature. We have shown that the experimental forward-bias I-V curves coincide with the theoretical ones using the bias-dependent inhomogeneous BH expression at low and high temperatures in the double-Gaussian distribution of BHs.